Atomic-Scale Observation of the Local Structure and 1D Quantum Effects in vdW Stacking Mo6Te6 Nanowires,Advanced Materials Interfaces

当前位置： X-MOL 学术 › Adv. Mater. Interfaces › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Atomic-Scale Observation of the Local Structure and 1D Quantum Effects in vdW Stacking Mo6Te6 Nanowires
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2022-12-04 , DOI: 10.1002/admi.202202043
Yuang Li ₁ , Di Wu ₁ , Dongli Wang ₁ , Yinuo Zhang ₁ , Tai Min ₁ , Yi Pan ₁

Affiliation

The sub-nanometer-diameter transitional-metal chalcogenides (M₆X₆) molecular wires are ideal 1D quantum systems. The electronic properties of such system are very sensitive to the interface interaction and local imperfection. Here, the atomic structure and local electronic structure of van der Waals (vdW) stacking Mo₆Te₆ nanowires fabricated by using molecular beam epitaxy are reported. Atomic-resolution scanning tunneling microscopy measurement shows that the vdW interface distance varies from 0.71 to 1.05 nm when Mo₆Te₆ wires stacked on graphite, MoTe₂, and Mo₆Te₆ surfaces. Scanning tunneling spectroscopy confirmed the 1D quantum effect of van Hove singularity and Tomonaga–Luttinger liquid behavior at 77.8 K. Single Te vacancies and their effect to the local structure distortion are observed as well. These observations shed light on the local structure and quantum effects of the M₆X₆ nanowire materials, which may find applications in future electronic devices.

中文翻译：

vdW 堆叠 Mo6Te6 纳米线中局部结构和一维量子效应的原子尺度观察

亚纳米直径的过渡金属硫族化物 (M ₆ X ₆ ) 分子线是理想的一维量子系统。这种系统的电子特性对界面相互作用和局部缺陷非常敏感。在此，报道了使用分子束外延法制备的范德华 (vdW) 堆叠 Mo ₆ Te _{6纳米线的原子结构和局域电子结构。}_{原子分辨率扫描隧道显微镜测量表明，当Mo 6} Te ₆线堆叠在石墨、MoTe ₂和Mo ₆ Te ₆上时，vdW界面距离在0.71到1.05 nm之间变化表面。扫描隧道光谱证实了范霍夫奇点的一维量子效应和 77.8 K 时的 Tomonaga-Luttinger 液体行为。还观察到单个 Te 空位及其对局部结构畸变的影响。这些观察揭示了 M ₆ X ₆纳米线材料的局部结构和量子效应，这些材料可能会在未来的电子设备中找到应用。

更新日期：2022-12-04

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南