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Ultrafast Ion Sputtering Modulation of Two-Dimensional Substrate for Highly Sensitive Raman Detection
ACS Materials Letters ( IF 9.6 ) Pub Date : 2022-11-21 , DOI: 10.1021/acsmaterialslett.2c00908
Xuelei Pan 1 , Xunbiao Zhou 1 , Xiaobin Liao 1 , Ruohan Yu 1 , Kesong Yu 1 , Sheng Lin 1 , Yao Ding 1 , Wen Luo 1, 2 , Mengyu Yan 1 , Liqiang Mai 1, 3
Affiliation  

Two-dimensional (2D) materials are typical plasmon-free substrates for surface-enhanced Raman scattering with atomic uniformity and moderate spectral background. The low intrinsic enhancement limits the application in trace detection, remaining a challenging issue to regulate both dipole–dipole interaction and charge transfer resonance. Herein, we developed an ultrafast low-energy ion sputtering method to controllably modify 2D substrate which pronouncedly enhances the charge transfer. The enhancement factor of Ti-modified monolayer MoS2 reaches 2.67 × 108 and detection limit is 10–10 M. We further demonstrated the universality by modifying other plasmon-free metals and using MoSe2 as a substrate. The enhancement mechanism was investigated by the density functional theory calculation, indicating a charge transfer between dye molecules and substrate enhanced by new states in the bandgap from Ti clusters. It is believed that this new strategy gives rise to the remarkable feasibility for fabricating metal clusters and improves the chemical mechanism enhancement.

中文翻译:

用于高灵敏度拉曼检测的二维衬底的超快离子溅射调制

二维 (2D) 材料是典型的无等离激元衬底,用于具有原子均匀性和中等光谱背景的表面增强拉曼散射。低本征增强限制了在痕量检测中的应用,仍然是调节偶极-偶极相互作用和电荷转移共振的具有挑战性的问题。在此,我们开发了一种超快低能量离子溅射方法来可控地修改 2D 基板,从而显着增强电荷转移。Ti修饰的单层MoS 2的增强因子达到2.67×10 8,检测限为10 –10 M。我们通过修饰其他无等离子体金属和使用MoSe 2进一步证明了普遍性作为基质。通过密度泛函理论计算研究了增强机制,表明染料分子和底物之间的电荷转移被 Ti 团簇带隙中的新状态增强。据信,这种新策略为制造金属团簇提供了显着的可行性,并改善了化学机制的增强。
更新日期:2022-11-21
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