超薄拓扑绝缘体β-Ag2Te和Ag2Te/WSe2基高性能光电探测器的合成,Small

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超薄拓扑绝缘体β-Ag2Te和Ag2Te/WSe2基高性能光电探测器的合成
Small ( IF 13.0 ) Pub Date : 2022-11-18 , DOI: 10.1002/smll.202205353
Fapeng Sun _{1,

2,

3} , Wenting Hong _{1,

2} , Xu He _{1,

2} , Chuanyong Jian _{1,

2} , Qiankun Ju _{1,

2,

3} , Qian Cai _{1,

2} , Wei Liu _{1,

2}

Affiliation

β-Ag ₂ Te以其窄带隙、高迁移率和拓扑绝缘体特性在电子和光电子应用中引起了广泛关注。_{然而，由于Ag 2} Te 的非层状结构，合成二维Ag ₂ Te仍然是一个重大挑战。在此，首次报道了通过范德华外延法合成大尺寸超薄单晶拓扑绝缘体2D Ag _{2 Te。}2D Ag ₂ Te 晶体表现出 p 型导电行为，具有 3336 cm ² V ^-1 s ^{-1的高载流子迁移率}在室温下。利用Ag 2 Te的高迁移率和完美的电子结构，_通过机械堆叠制备Ag ₂ Te/WSe ₂异质结，并显示出2×10 ⁵的超高整流比。Ag ₂ Te/WSe ₂光电探测器还表现出自驱动特性，在近红外区域具有快速响应速度（40 µs/60 µs）。在光伏模式下获得了高响应度（219 mA W ^-1）和6×10 ^{5的光开/关比。}_{Ag 2} Te/WSe ₂的整体性能photodetector 在所有报道的 2D 光电探测器中具有显着的竞争力。这些结果表明 2D Ag ₂ Te 是未来电子和光电应用的有前途的候选者。

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Synthesis of Ultrathin Topological Insulator β-Ag2Te and Ag2Te/WSe2-Based High-Performance Photodetector

β-Ag₂Te has attracted considerable attention in the application of electronics and optoelectronics due to its narrow bandgap, high mobility, and topological insulator properties. However, it remains a significant challenge to synthesize 2D Ag₂Te because of the non-layered structure of Ag₂Te. Herein, the synthesis of large-size, ultrathin single crystal topological insulator 2D Ag₂Te via the van der Waals epitaxial method for the first time is reported. The 2D Ag₂Te crystal exhibits p-type conduction behavior with high carrier mobility of 3336 cm² V⁻¹ s⁻¹ at room temperature. Taking advantage of the high mobility and perfect electron structure of Ag₂Te, the Ag₂Te/WSe₂ heterojunctions are fabricated via mechanical stacking and show an ultrahigh rectification ratio of 2 × 10⁵. Ag₂Te/WSe₂ photodetector also exhibits self-driven properties with a fast response speed (40 µs/60 µs) in the near-infrared region. High responsivity (219 mA W⁻¹) and light ON/OFF ratio of 6 × 10⁵ are obtained under the photovoltaic mode. The overall performance of the Ag₂Te/WSe₂ photodetector is significantly competitive among all reported 2D photodetectors. These results indicate that 2D Ag₂Te is a promising candidate for future electronic and optoelectronic applications.

更新日期：2022-11-18

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