An effective piezocatalytic semiconductor (C₃N_5−x-O) was prepared with a two-step thermal polymerization/etching method. Experimental characterizations and structural simulations revealed that the dual-defects of O doping and N vacancy in C₃N₅ not only increases the asymmetry and the exposure of triangular pores, but also optimizes the band structure and charge distribution of the thin-layered C₃N_5−x-O, endowing it with an enhanced piezoelectricity and increased active surfaces. Piezocatalysis-mediated pollutant degradation and H₂O₂ production were achieved with substantially improved efficiencies over the pristine carbon nitrides. Under ultrasound-assisted piezocatalysis, tetracycline was degraded with a kinetic rate of 0.0356 min⁻¹ and this figure was further increased to 0.0561 min⁻¹ in piezocatalytic-Fenton. A yield of 0.615 mM/g/h for piezocatalytic production of H₂O₂ was achieved in pure water. The synergistic effect of the defect sites revealed in present work could facilitate the more rational design of nitrogen-rich carbon nitrides for environmental remediation and the production of value-added chemicals.

采用两步热聚合/蚀刻法制备了一种有效的压电催化半导体 (C ₃ N _{5−x -O)。实验表征和结构模拟表明，C 3} N ₅中的O掺杂和N空位双缺陷不仅增加了三角形孔的不对称性和暴露，而且优化了薄层C ₃的能带结构和电荷分布N _5−x -O，赋予它增强的压电性和增加的活性表面。压电催化介导的污染物降解和 H ₂ O ₂与原始碳氮化物相比，生产效率大大提高。在超声辅助压电催化下，四环素以 0.0356 min ^-1的动力学速率降解，并且该数字在压电催化-Fenton 中进一步增加到 0.0561 min ^-1。在纯水中压电催化生产 H ₂ O ₂的产率为 0.615 mM/g/h 。目前工作中揭示的缺陷位点的协同效应可以促进更合理地设计用于环境修复和生产增值化学品的富氮碳氮化物。