As the key to manufacturing large scale integrated circuits, horizontally aligned semiconducting single-walled carbon nanotube (s-SWNT) arrays play a key role in the next-generation electronic device. Though various techniques have been developed, obtaining pure s-SWNT horizontal arrays is still the greatest challenge. Here, we propose an effective and facile method to produce s-SWNT arrays from a diverse perspective by implementing photochemical chlorination on the as-grown aligned SWNT arrays. The electrical measurements demonstrate a high fraction of s-SWNTs (>98.1%) after photochlorination, and its exceptional performance as a field-effect transistor with an on-off ratio up to 3730. Meanwhile, through the well-controlled mask-assisted photochlorination, a type of metallic-semiconducting SWNT intramolecular junction with rectifying diode and non-linear transport characteristics has also been successfully obtain. Our work provides a new method for the preparation of high-purity s-SWNT arrays and SWNT intramolecular junction, which has great significance for the carbon-based nano-electronic devices in applications.

作为制造大规模集成电路的关键，水平排列的半导体单壁碳纳米管（s-SWNT）阵列在下一代电子设备中发挥着关键作用。尽管已经开发了各种技术，但获得纯 s-SWNT 水平阵列仍然是最大的挑战。在这里，我们提出了一种有效且简便的方法，通过对生长的对齐 SWNT 阵列实施光化学氯化，从不同的角度生产 s-SWNT 阵列。电气测量表明，光氯化后 s-SWNT 的比例很高 (>98.1%)，并且其作为场效应晶体管的卓越性能具有高达 3730 的开关比。同时，通过良好控制的掩模辅助光氯化, 还成功获得了一种具有整流二极管和非线性传输特性的金属-半导体单壁碳纳米管分子内结。该工作为制备高纯度s-SWNT阵列和SWNT分子内结提供了一种新方法，对碳基纳米电子器件的应用具有重要意义。