基于 Ga2O3/GaN 异质界面的高响应自驱动宽带紫外光电探测器,ACS Applied Electronic Materials

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基于 Ga2O3/GaN 异质界面的高响应自驱动宽带紫外光电探测器
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2022-11-13 , DOI: 10.1021/acsaelm.2c01362
Urvashi Varshney _{1,

2} , Anuj Sharma _{1,

2} , Pargam Vashishtha _{1,

2,

3} , Lalit Goswami ₁ , Govind Gupta _{1,

2}

Affiliation

响应多个紫外 (UV) 波长 (230-400 nm) 的宽带紫外 (BBUV) 光电探测器 (PD) 在导弹警报、火警、天文成像等各个领域受到了相当大的关注。由于增加对 BBUVPD 的需求，需要节能的自驱动设备。这项工作使用简单的热氧化工艺开发了一种基于 β-Ga ₂ O ₃ /GaN 异质界面的器件，该器件在自驱动、低偏置和宽光谱响应范围方面表现出超高性能。制造的器件在自驱动操作模式下表现出出色的稳定性能，具有 1.2 × 10 ³ mA W ^–1的超高响应度和 3.8 × 10 的非常高的外部量子效率在 266 nm 光照下为^{2 %。}此外，所制造器件在光电导模式 (@5 V) 下的性能表现出 2.21 × 10 ⁵ mA W ^{–1的超高响应度、10}^–14 W Hz ^–1/2的极低噪声等效功率，以及10 ⁴ %的非常高的外部量子效率。此外，该器件响应 355 nm 的照明波长，在 0 V (5 V) 施加偏压时响应率为 0.74 mA W ^–1 (2.2 × 10 ⁴ mA W ^{–1 )。}该研究将推动创造下一代光电设备以理解和利用 Ga ₂ O _3的前景/GaN 异质界面器件。

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Ga2O3/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

The broad-band ultraviolet (BBUV) photodetectors (PDs) responding to multiple ultraviolet (UV) wavelengths (230–400 nm) have received considerable attention in various fields, such as missile warnings, fire alarms, astronomical imaging, etc. Due to increased demand for BBUVPDs, there is a need for energy-efficient self-driven devices. This work used a simple thermal oxidation process to develop a β-Ga₂O₃/GaN heterointerface-based device that shows ultrahigh performance in self-driven, low bias, and spectrally broad responsive range. The fabricated device exhibits excellent stable performance in the self-driven mode of operation with an ultrahigh responsivity of 1.2 × 10³ mA W^–1 and a very high external quantum efficiency of 3.8 × 10²% under 266 nm light illumination. Further, the performance of the fabricated device in the photoconductive mode (@5 V) displays an ultrahigh responsivity of 2.21 × 10⁵ mA W^–1, a very low noise equivalent power of 10^–14 W Hz^–1/2, and a very high external quantum efficiency of 10⁴%. Furthermore, the device responds to the illumination wavelength of 355 nm, with a responsivity of 0.74 mA W^–1 (2.2 × 10⁴ mA W^–1) at a 0 V (5 V) applied bias. The study will boost the prospects for creating next-generation optoelectronic devices to comprehend and utilize Ga₂O₃/GaN heterointerface devices.

更新日期：2022-11-13

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