Nature Communications ( IF 14.7 ) Pub Date : 2022-11-07 , DOI: 10.1038/s41467-022-34453-9
Pingping Zhang 1 , Gaoling Yang 2 , Fei Li 3 , Jianbing Shi 1 , Haizheng Zhong 1
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Photolithography has shown great potential in patterning solution-processed nanomaterials for integration into advanced optoelectronic devices. However, photolithography of perovskite quantum dots (PQDs) has so far been hindered by the incompatibility of perovskite with traditional optical lithography processes where lots of solvents and high-energy ultraviolet (UV) light exposure are required. Herein, we report a direct in situ photolithography technique to pattern PQDs based on the photopolymerization catalyzed by lead bromide complexes. By combining direct photolithography with in situ fabrication of PQDs, this method allows to directly photolithograph perovskite precursors, avoiding the complicated lift-off processes and the destruction of PQDs by solvents or high-energy UV light, as PQDs are produced after lithography exposure. We further demonstrate that the thiol-ene free-radical photopolymerization is catalyzed by lead bromide complexes in the perovskite precursor solution, while no external initiators or catalysts are needed. Using direct in situ photolithography, PQD patterns with high resolution up to 2450 pixels per inch (PPI), excellent fluorescence uniformity, and good stability, are successfully demonstrated. This work opens an avenue for non-destructive direct photolithography of high-efficiency light-emitting PQDs, and potentially expands their application in various integrated optoelectronic devices.
中文翻译:
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基于溴化铅配合物光催化的钙钛矿量子点直接原位光刻
光刻在图案化溶液处理的纳米材料以集成到先进的光电设备中显示出巨大的潜力。然而,迄今为止,钙钛矿量子点 (PQD) 的光刻一直受到钙钛矿与传统光刻工艺不相容的阻碍,传统光刻工艺需要大量溶剂和高能紫外 (UV) 光曝光。在此,我们报告了一种直接原位光刻技术,基于溴化铅络合物催化的光聚合来图案化 PQD。通过将直接光刻与 PQD 的原位制造相结合,该方法允许直接光刻钙钛矿前体,避免复杂的剥离过程和溶剂或高能紫外光对 PQD 的破坏,因为 PQD 是在光刻曝光后产生的。我们进一步证明硫醇-烯自由基光聚合是由钙钛矿前体溶液中的溴化铅配合物催化的,而无需外部引发剂或催化剂。使用直接原位光刻技术,成功展示了分辨率高达每英寸 2450 像素 (PPI)、出色的荧光均匀性和良好稳定性的 PQD 图案。这项工作为高效发光 PQD 的无损直接光刻开辟了一条途径,并有可能扩大其在各种集成光电器件中的应用。成功展示了分辨率高达每英寸 2450 像素 (PPI)、出色的荧光均匀性和良好稳定性的 PQD 图案。这项工作为高效发光 PQD 的无损直接光刻开辟了一条途径,并有可能扩大其在各种集成光电器件中的应用。成功展示了分辨率高达每英寸 2450 像素 (PPI)、出色的荧光均匀性和良好稳定性的 PQD 图案。这项工作为高效发光 PQD 的无损直接光刻开辟了一条途径,并有可能扩大其在各种集成光电器件中的应用。