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High Quality Monolayer Graphene Synthesized by Resistive Heating Cold Wall Chemical Vapor Deposition
Advanced Materials ( IF 27.4 ) Pub Date : 2015-06-05 , DOI: 10.1002/adma.201501600
Thomas H Bointon 1 , Matthew D Barnes 1 , Saverio Russo 1 , Monica F Craciun 1
Affiliation  

The growth of graphene using resistive‐heating cold‐wall chemical vapor deposition (CVD) is demonstrated. This technique is 100 times faster and 99% lower cost than standard CVD. A study of Raman spectroscopy, atomic force microscopy, scanning electron micro­scopy, and electrical magneto‐transport measurements shows that cold‐wall CVD graphene is of comparable quality to natural graphene. Finally, the first transparent flexible graphene capacitive touch‐sensor is demonstrated.
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中文翻译:

电阻加热冷壁化学气相沉积法合成高质量单层石墨烯

演示了使用电阻加热冷壁化学气相沉积(CVD)来生长石墨烯。该技术比标准 CVD 快 100 倍,成本低 99%。对拉曼光谱、原子力显微镜、扫描电子显微镜和电磁输运测量的研究表明,冷壁 CVD 石墨烯的质量与天然石墨烯相当。最后,展示了第一个透明柔性石墨烯电容式触摸传感器。
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更新日期:2015-06-05
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