Anomalous Hall conductivity (AHC) and valley polarization are attracting tremendous interest in spintronics and valleytronics technologies. Here, we investigate the possibility of the electric field induced switching of the AHC and magnetic proximity effect induced valley polarization in the two-dimensional (2D) WSe₂/1T-VSe₂ heterostructure. Due to the small total energy difference, two stackings could happen (C-I and C-II). The WSe₂ layer has a valley polarization of -19 meV in the C-II stacking, and it is further increased up to -28 meV under electric fields. Also, we obtain an AHC of 75 (80) S/cm in the C-I (II) stacking. We find a sign change from positive AHC to negative value under the electric field in hole doping of the C-II stacking. We attribute this reversal of the AHC to the electric field dependent Berry curvature variation. Our finding suggests that the electric field induced AHC switching can be possible in the 2D heterostructure.

异常霍尔电导率 (AHC) 和谷极化正引起人们对自旋电子学和谷电子学技术的极大兴趣。在这里，我们研究了在二维（2D）WSe ₂ /1T-VSe ₂异质结构中电场诱导的AHC切换和磁邻近效应诱导谷极化的可能性。由于总能量差很小，可能会发生两次堆叠（CI 和 C-II）。WSe ₂层在C-II堆叠中的谷极化为-19 meV，在电场下进一步增加到-28 meV。此外，我们在 CI (II) 堆叠中获得了 75 (80) S/cm 的 AHC。我们发现在 C-II 堆叠的空穴掺杂的电场下，从正 AHC 到负值的符号变化。我们将 AHC 的这种反转归因于电场相关的贝里曲率变化。我们的发现表明，在二维异质结构中，电场诱导的 AHC 切换是可能的。