通过金属有机化学气相沉积用新型前驱体生长增强的 AlScN/GaN 异质结构,Physica Status Solidi-Rapid Research Letters

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通过金属有机化学气相沉积用新型前驱体生长增强的 AlScN/GaN 异质结构
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2022-10-25 , DOI: 10.1002/pssr.202200387
Isabel Streicher ₁ , Stefano Leone ₁ , Lutz Kirste ₁ , Christian Manz ₁ , Patrik Straňák ₁ , Mario Prescher ₁ , Patrick Waltereit ₁ , Michael Mikulla ₁ , Rüdiger Quay ₁ , Oliver Ambacher ₂

Affiliation

_{由于常规使用的前体三环戊二烯基钪 (Cp 3} Sc)的低蒸气压，通过金属有机化学气相沉积 (MOCVD) 生长 AlScN 高电子迁移率晶体管 (HEMT) 结构具有挑战性。结果表明，通过使用双甲基环戊二烯基氯化钪 ((MCp) ₂ ScCl)，AlScN/GaN 异质结构的电气和结构特性得到显着改善，它具有更高的蒸气压并允许增加摩尔流量，从而提高生长速率（遗传资源）。展示了在不同势垒生长温度下沉积的具有优异电特性的 AlScN/GaN HEMT 异质结构。薄层电阻

R_{嘘}

在 900 °C 势垒生长温度下获得的 172 Ω sq ^-1是迄今为止报道的 AlScN/GaN HEMT 结构中最低的。片状载流子密度

n_{秒}

是

◂+▸ 3.23 \times 10^{13} ◂◽˙▸ {厘米}^{- 2个}

电子迁移率μ为1124cm ² Vs ^-1。

"点击查看英文标题和摘要"

Enhanced AlScN/GaN Heterostructures Grown with a Novel Precursor by Metal–Organic Chemical Vapor Deposition

Growth of AlScN high-electron-mobility transistor (HEMT) structures by metal–organic chemical vapor deposition (MOCVD) is challenging due to the low vapor pressure of the conventionally used precursor tris-cyclopentadienyl-scandium (Cp₃Sc). It is shown that the electrical and structural characteristics of the AlScN/GaN heterostructure improve significantly by using bis-methylcyclopentadienyl-scandiumchloride ((MCp)₂ScCl), which has a higher vapor pressure and allows for an increased molar flow and thus higher growth rate (GR). AlScN/GaN HEMT heterostructures with superior electrical characteristics deposited at different barrier growth temperatures are presented. The sheet resistance

R_{sh}

of 172 Ω sq⁻¹ obtained at 900 °C barrier growth temperature is among the lowest reported so far for AlScN/GaN HEMT structures. The sheet charge carrier density