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Band Alignment Engineering in ns2 Electrons Doped Metal Halide Perovskites
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2022-10-26 , DOI: 10.1002/lpor.202200458
Kai Han 1 , Jianwei Qiao 1 , Shuai Zhang 1 , Binbin Su 1 , Bibo Lou 2 , Chong‐Geng Ma 2 , Zhiguo Xia 1, 3
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2022-10-26 , DOI: 10.1002/lpor.202200458
Kai Han 1 , Jianwei Qiao 1 , Shuai Zhang 1 , Binbin Su 1 , Bibo Lou 2 , Chong‐Geng Ma 2 , Zhiguo Xia 1, 3
Affiliation
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Luminescent metal halide perovskites (MHPs) open new avenues for highly efficient radiation detection. To challenge the state-of-art technology, fundamental understanding of factors controlling radiation light yield of MHP scintillators is urgent. Herein, a design method is established by simultaneously considering charge-transfer and recombination efficiencies via band alignment engineering in doped MHPs materials, and this strategy is corroborated experimentally and computationally by applying it to the luminescence of ns2 electron (Sb3+, Bi3+, and Te4+) doped vacancy-ordered double perovskite Cs2ZrCl6. Alloying Te4+ into Cs2ZrCl6 is optimized and significantly improves the scintillation performance, including a twofold increase in light yield and a threefold increase in detection limit over pristine Cs2ZrCl6, and high-resolution X-ray imaging with 20 μm for 2D and 0.2 mm for 3D imaging. It is believed that doping engineering in MHPs enabling band alignment method holds great potential for the development of next-generation MHP scintillators.
中文翻译:
ns2电子掺杂金属卤化物钙钛矿中的能带对准工程
发光金属卤化物钙钛矿 (MHP) 为高效辐射检测开辟了新途径。为了挑战最先进的技术,迫切需要对控制 MHP 闪烁体辐射光产率的因素有基本的了解。在此,通过掺杂 MHPs 材料中的能带排列工程同时考虑电荷转移和复合效率,建立了一种设计方法,并将该策略应用于n s 2电子(Sb 3+,Bi 3+ , 和Te 4+ )掺杂空位有序双钙钛矿Cs 2 ZrCl 6。将 Te 4+合金化为 Cs2 ZrCl 6经过优化并显着提高了闪烁性能,包括与原始 Cs 2 ZrCl 6相比,光输出增加两倍,检测限增加三倍,以及高分辨率 X 射线成像,2D 为 20 μm,2D 为 0.2 mm 3D成像。据信,MHPs 中的掺杂工程使带对齐方法具有开发下一代 MHP 闪烁体的巨大潜力。
更新日期:2022-10-26
中文翻译:
![](https://scdn.x-mol.com/jcss/images/paperTranslation.png)
ns2电子掺杂金属卤化物钙钛矿中的能带对准工程
发光金属卤化物钙钛矿 (MHP) 为高效辐射检测开辟了新途径。为了挑战最先进的技术,迫切需要对控制 MHP 闪烁体辐射光产率的因素有基本的了解。在此,通过掺杂 MHPs 材料中的能带排列工程同时考虑电荷转移和复合效率,建立了一种设计方法,并将该策略应用于n s 2电子(Sb 3+,Bi 3+ , 和Te 4+ )掺杂空位有序双钙钛矿Cs 2 ZrCl 6。将 Te 4+合金化为 Cs2 ZrCl 6经过优化并显着提高了闪烁性能,包括与原始 Cs 2 ZrCl 6相比,光输出增加两倍,检测限增加三倍,以及高分辨率 X 射线成像,2D 为 20 μm,2D 为 0.2 mm 3D成像。据信,MHPs 中的掺杂工程使带对齐方法具有开发下一代 MHP 闪烁体的巨大潜力。