基于 HfO2/ZrO2 超晶格结构设计无唤醒铁电电容器,Advanced Electronic Materials

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基于 HfO2/ZrO2 超晶格结构设计无唤醒铁电电容器
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-10-25 , DOI: 10.1002/aelm.202200737
Na Bai ₁ , Kan‐Hao Xue _{1,

2} , Jinhai Huang ₁ , Jun‐Hui Yuan ₁ , Wenlin Wang ₁ , Ge‐Qi Mao ₁ , Lanqing Zou ₁ , Shengxin Yang ₁ , Hong Lu ₁ , Huajun Sun _{1,

2} , Xiangshui Miao _{1,

2}

Affiliation

唤醒现象广泛存在于二氧化铪基铁电电容器中，这会导致器件参数随时间变化。据报道，在较高温度下结晶可有效消除唤醒，但高温可能会产生单斜晶相或产生更多的氧空位。_{在这项工作中，提出了一种用于 Hf 0.5} Zr _0.5 O ₂ (HZO) 超晶格铁电体结晶的单向退火方法，该方法涉及从 Pt/ZrO ₂界面侧加热。结果表明，600 °C 退火仅导致 HZO 中单斜晶相含量适中，TiN/HZO/Pt 电容器具有无唤醒特性和 27.4 µC cm ^{−2的可切换剩余极化值}. 另一方面，从 TiN/HfO ₂侧加热，或使用 500 °C 退火温度，可能会产生需要唤醒过程的铁电器件。Pt/ZrO ₂的特殊配置通过与其他几种超晶格结构和 HZO 固态溶液的比较研究得到验证。发现在 600 °C 从 Pt/HfO ₂侧加热会导致高漏电流和忆阻器行为。讨论了铁电相稳定和忆阻器形成的机制。单向加热方法也可用于其他基于氧化铪的铁电设备。

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Designing Wake-Up Free Ferroelectric Capacitors Based on the HfO2/ZrO2 Superlattice Structure

The wake-up phenomenon widely exists in hafnia-based ferroelectric capacitors, which causes device parameter variation over time. Crystallization at a higher temperature has been reported to be effective in eliminating wake-up, but high temperature may yield the monoclinic phase or generate more oxygen vacancies. In this work, a unidirectional annealing method is proposed for the crystallization of Hf_0.5Zr_0.5O₂ (HZO) superlattice ferroelectrics, which involves heating from the Pt/ZrO₂ interface side. It is demonstrated that 600 °C annealing only leads to a moderate content of monoclinic phase in HZO, and the TiN/HZO/Pt capacitor exhibits wake-up free nature and a switchable remnant polarization value of 27.4 µC cm⁻². On the other hand, heating from the TiN/HfO₂ side, or using 500 °C annealing temperature, could yield ferroelectric devices that require a wake-up process. The special configuration of Pt/ZrO₂ is verified by comparative studies with several other superlattice structures and HZO solid-state solutions. It is discovered that heating from the Pt/HfO₂ side at 600 °C leads to high leakage current and a memristor behavior. The mechanisms of ferroelectric phase stabilization and memristor formation have been discussed. The unidirectional heating method can also be useful for other hafnia-based ferroelectric devices.

更新日期：2022-10-25

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