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Growth of SnX2 (X = Br, I) Single Crystals with Self-Trapped Exciton Emission
Inorganic Chemistry ( IF 4.3 ) Pub Date : 2022-10-23 , DOI: 10.1021/acs.inorgchem.2c03058
Dayu Huang 1, 2 , Qiuyun Ouyang 2 , Jinjiang Wu 1 , Youchao Kong 3 , Bo Wang 3 , Hongzhou Lian 1 , Jun Lin 1
Inorganic Chemistry ( IF 4.3 ) Pub Date : 2022-10-23 , DOI: 10.1021/acs.inorgchem.2c03058
Dayu Huang 1, 2 , Qiuyun Ouyang 2 , Jinjiang Wu 1 , Youchao Kong 3 , Bo Wang 3 , Hongzhou Lian 1 , Jun Lin 1
Affiliation
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Broadband emission with a large Stokes shift is important to obtain an excellent color rendering index of the solid-state lighting device. Among low-dimensional material and perovskite-like phosphors with broadband self-trapped emission, Sn-based phosphors have attracted much attention due to their high photoluminescence quantum yield (PLQY). However, the disadvantage is that the synthesis of Sn-based phosphors needs to be performed in a glovebox. Upon photoexcitation, the broadband emission of self-trapped excitons results from exciton–phonon coupling induced by the transient distortion of the lattice. Low-dimensional material structures often promote self-trapped emission because of more vibrational degrees of freedom and easier polarization under photoexcitation. Here, zero-dimensional (0D) SnX2 (X = Br, I) single crystals are synthesized by the solvent evaporation method in the air. SnX2 emits blue light, broadband yellow light, and deep red light, among which SnBr2 has the best luminescence performance. The photoluminescence quantum yield (PLQY) of SnBr2 reaches 85% and the Stokes shift reaches 265 nm. The PL intensity of SnX2 is linearly related to excitation power, which preliminarily indicates that the origin of SnX2 luminescence is attributed to self-trapped emission (STE). The white light-emitting diodes (WLEDs) were fabricated using yellow-emitting SnBr2 and blue-emitting BaMgAl10O17:Eu2+, which has a low correlated color temperature (3160 K) and a relatively common color rendering index (79).
中文翻译：
具有自陷激子发射的 SnX2 (X = Br, I) 单晶的生长
具有大斯托克斯频移的宽带发射对于获得优异的固态照明装置的显色指数很重要。在具有宽带自陷发射的低维材料和类钙钛矿荧光粉中，Sn基荧光粉由于其高光致发光量子产率（PLQY）而备受关注。然而，缺点是锡基荧光粉的合成需要在手套箱中进行。在光激发下，自陷激子的宽带发射是由晶格瞬态畸变引起的激子 - 声子耦合引起的。低维材料结构通常会促进自陷发射，因为它具有更多的振动自由度和在光激发下更容易极化。这里，零维 (0D) SnX 2(X = Br, I) 单晶在空气中通过溶剂蒸发法合成。SnX 2发出蓝光、宽带黄光和深红光，其中SnBr 2的发光性能最好。SnBr 2的光致发光量子产率（PLQY）达到85%，斯托克斯位移达到265 nm。SnX 2的PL强度与激发功率呈线性相关，初步表明SnX 2发光的起源是自陷发射（STE）。白光发光二极管 (WLED) 使用发黄光的 SnBr 2和发蓝光的 BaMgAl 10 O 17 :Eu 2+制造。，它具有较低的相关色温 (3160 K) 和相对常见的显色指数 (79)。
更新日期：2022-10-23
中文翻译：
具有自陷激子发射的 SnX2 (X = Br, I) 单晶的生长
具有大斯托克斯频移的宽带发射对于获得优异的固态照明装置的显色指数很重要。在具有宽带自陷发射的低维材料和类钙钛矿荧光粉中，Sn基荧光粉由于其高光致发光量子产率（PLQY）而备受关注。然而，缺点是锡基荧光粉的合成需要在手套箱中进行。在光激发下，自陷激子的宽带发射是由晶格瞬态畸变引起的激子 - 声子耦合引起的。低维材料结构通常会促进自陷发射，因为它具有更多的振动自由度和在光激发下更容易极化。这里，零维 (0D) SnX 2(X = Br, I) 单晶在空气中通过溶剂蒸发法合成。SnX 2发出蓝光、宽带黄光和深红光，其中SnBr 2的发光性能最好。SnBr 2的光致发光量子产率（PLQY）达到85%，斯托克斯位移达到265 nm。SnX 2的PL强度与激发功率呈线性相关，初步表明SnX 2发光的起源是自陷发射（STE）。白光发光二极管 (WLED) 使用发黄光的 SnBr 2和发蓝光的 BaMgAl 10 O 17 :Eu 2+制造。，它具有较低的相关色温 (3160 K) 和相对常见的显色指数 (79)。
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