The Spiro-OMeTAD is an excellent candidate for application as hole transport material (HTM), but its high hygroscopicity, inclination to crystallize, and fragility to moisture and heat make it unsuitable for solar cells. Thus, it is of interest to investigate other HTM candidates. In this paper, the use of p-type InGaAs as hole transport material (HTM) has been suggested to enhance the performance of perovskite-based solar cells (PSC). The simulation of a hybrid CH₃NH₃PbI₃/InGaAs planar heterojunction perovskite solar cell is performed using the Silvaco ATLAS simulator. In order to confirm the predictability of the proposed simulation methodology, the conventional ITO/TiO₂/MAPbI₃/Spiro-OMeTAD structure is simulated, and shows good coherence with experimental results. The proposed design using InGaAs as HTM outperforms the conventional device in terms of short-circuit current density (J_SC) of 37.2 mA/cm², open-circuit voltage (V_OC) of 1 V, fill factor (FF) of 80% and high value of efficiency. In addition, the findings show that with In content of x = 0.7 the efficiency will improve to reach a value of about 30%.

Spiro-OMeTAD 是作为空穴传输材料 (HTM) 应用的绝佳候选材料，但其高吸湿性、结晶倾向以及对水分和热的脆弱性使其不适用于太阳能电池。因此，调查其他 HTM 候选者是有意义的。在本文中，建议使用 p 型 InGaAs 作为空穴传输材料 (HTM) 来提高钙钛矿基太阳能电池 (PSC) 的性能。使用 Silvaco ATLAS 模拟器对混合 CH ₃ NH ₃ PbI ₃ /InGaAs 平面异质结钙钛矿太阳能电池进行模拟。为了确认所提出的模拟方法的可预测性，传统的 ITO/TiO ₂ /MAPbI ₃模拟了 /Spiro-OMeTAD 结构，与实验结果具有良好的一致性。所提出的使用 InGaAs 作为 HTM 的设计在37.2 mA/cm ²的短路电流密度 ( J _SC )、1 V的开路电压 ( V _OC )、80% 的填充因子 (FF)方面优于传统器件和高效率的价值。此外，研究结果表明，在x  = 0.7 的 In 含量下，效率将提高到约 30% 的值。