Ferroelectric memories show great potential in applications of portable electronics due to low power consumption, high reliability and fast response speed. Therefore, non-destructive readout of ferroelectric memories using the ferroelectric photovoltaic effect attracted tremendous research attention. In this investigation, flexoelectric-enhanced photovoltaic effect (FPV effect) were systematically investigated in curved 3D-printed BaTiO₃/PVDF composite films. In the bending process, a strain gradient field was formed between the BaTiO₃ (BTO) particles, which led to a relatively large flexoelectric effect. Compared with that of pristine PVDF, the flexoelectric coefficient of BTO/PVDF-15 (15% BTO) was increased 3.7-fold to 2.65 × 10⁻⁹ C/m. Furthermore, we found that the photovoltaic current I_pv of the BTO/PVDF-15 (15% BTO) composite film increased by 3.4 times compared with the pristine PVDF film at the same curvature. This is mainly attributed to the FPV effect. In addition, “polarization channels” were found for the first time inside nanocomposite materials using the flexoelectricity effect through 2D phase-field simulations, and the channels can be artificially controlled by simply bending the film. Most importantly, the BTO/PVDF-based composite film was designed as flexible ferroelectric memories. We demonstrated for the first time that the intensity difference of the signal for 0 and 1 of the BTO/PVDF-based memories were more than 10 times, which can be read directly using a laser. This investigation shows great promise that flexoelectricity in piezoelectric polymer nanocomposite can greatly benefit the nondestructive readout of ferroelectric memory devices.

由于低功耗、高可靠性和快速响应速度，铁电存储器在便携式电子产品的应用中显示出巨大的潜力。因此，利用铁电光伏效应对铁电存储器进行非破坏性读出引起了极大的研究关注。_{在本研究中，系统地研究了弯曲的 3D 打印 BaTiO 3} /PVDF 复合薄膜中的挠曲电增强光伏效应（FPV 效应） 。_{在弯曲过程中，BaTiO 3} (BTO)颗粒之间形成了应变梯度场，从而产生了较大的挠曲电效应。与原始 PVDF 相比，BTO/PVDF-15 (15% BTO) 的挠曲电系数提高了 3.7 倍，达到 2.65 × 10 ^-9厘米。此外，我们发现光伏电流 I _pvBTO/PVDF-15 (15% BTO) 复合薄膜在相同曲率下与原始 PVDF 薄膜相比增加了 3.4 倍。这主要归因于FPV效应。此外，通过二维相场模拟，首次利用挠曲电效应在纳米复合材料内部发现了“极化通道”，并且可以通过简单地弯曲薄膜来人为地控制通道。最重要的是，基于 BTO/PVDF 的复合薄膜被设计为柔性铁电存储器。我们首次证明了基于 BTO/PVDF 的存储器的 0 和 1 信号强度差异超过 10 倍，可以使用激光直接读取。