In recent years, antiferromagnetic spintronics has attracted enormous attentions due to the great potential for next-generation picosecond and highly packed information technology. Since the theoretical prediction and experimental observation of the large anomalous Hall effect in the noncollinear antiferromagnetic metal Mn₃Sn, which break the traditional perception that the anomalous Hall effect is proportional to magnetization, this material itself has become a hot spot in the antiferromagnetic spintronics. More intriguingly, evidence for the existence of Weyl points in Mn₃Sn has been reported, making it an ideal candidate even for topological antiferromagnetic spintronics. In this review, we comprehensively summarize various exotic spintronic properties of Mn₃Sn, such as the anomalous Hall effect, the anomalous Nernst effect, the topological Hall effect, the magneto-optical Kerr effect, the spin Hall effect and its Terahertz spintronic response. In order to build practical spintronic devices, we then discuss the manipulation of its spin structures for random access memory device applications. In the final part, brief perspectives on future research regarding Mn₃Sn are presented, which are expected to pave the way for practical device applications related to the antiferromagnetic spintronics field.

近年来，由于下一代皮秒和高密度信息技术的巨大潜力，反铁磁自旋电子学引起了极大的关注。由于对非共线反铁磁金属Mn ₃ Sn中大反常霍尔效应的理论预测和实验观察，打破了反铁磁自旋电子学中反铁磁反常霍尔效应与磁化成正比的传统观念，该材料本身已成为反铁磁自旋电子学研究的热点。更有趣的是，已经报道了 Mn ₃ Sn中存在 Weyl 点的证据，使其成为拓扑反铁磁自旋电子学的理想候选者。_{在这篇综述中，我们全面总结了 Mn 3}的各种奇异的自旋电子特性Sn，如反常霍尔效应、反常能斯特效应、拓扑霍尔效应、磁光克尔效应、自旋霍尔效应及其太赫兹自旋电子响应。为了构建实用的自旋电子器件，我们随后讨论了在随机存取存储器件应用中对其自旋结构的操纵。在最后一部分，简要介绍了有关 Mn ₃ Sn 的未来研究，这些展望将为与反铁磁自旋电子学领域相关的实际器件应用铺平道路。