It was synthesized oxygen-deficient (1, 2, 3-BQ)-VO formulated as (1, 2, 3-BQ)_0.25V₂O₅·0.5H₂O (BQ = benzoquinone) via a facile one-step hydrothermal technique. Continuous rotation electron diffraction (cRED), Rietveld refinement and spherical aberration-corrected transmission election microscopy unravel the successful pre-intercalation of the BQ organic species into the layered vanadium oxide, in which two neighboring V-O-V monolayers are observed with the (001) facet as the division plane. (1, 2, 3-BQ)-VO possesses a good electrochemical property in 3 M Zn(CF₃SO₃)₂. And in the electrolyte with Al³⁺, it shows improved rate capability and remarkably enhanced cycling performance. Its average capacity is up to an unprecedented value of 446/400 mAh g^-1 at 0.2/1 A g^-1 with a capacity retention exceeding 100 % over 550 cycles at 1 A g^-1 (411 mAh g^-1), which is associated with the dynamic reversible conversion between disorder and order on the (00l) facets. The inserted Al³⁺ into the inner channel of (1, 2, 3-BQ)-VO during the discharge process, not only acts as the interlayer pillar to prevent the collapse of the layered structure, but also can improve the crystallinity of the charged (1, 2, 3-BQ)-VO sample due to the more ordered atomic arrays from the interlayer (00l) facets. And the dual pillars of BQ and Al³⁺ in the sample can boost the exposure of active sites, thus enhance the storage capacity. In addition, density functional theory (DFT) calculations disclose a small Zn²⁺ diffusion barrier of 0.85 eV in (1, 2, 3-BQ)-VO. Moreover, it is found that the electrolyte with Al³⁺ is not only beneficial for the modification of the (1, 2, 3-BQ)-VO cathode, but also can inhibit the Zn dendrite formation at the Zn anode.

它是通过简便的一步水热法合成了缺氧的(1, 2, 3-BQ)-VO，其形式为(1, 2, 3-BQ) _0.25 V ₂ O ₅ ·0.5H ₂ O (BQ = benzoquinone)技术。连续旋转电子衍射 (cRED)、Rietveld 细化和球面像差校正透射电子显微镜揭示了 BQ 有机物质成功预嵌入层状氧化钒，其中观察到两个相邻的 VOV 单层与 (001) 面为分割平面。_{(1, 2, 3-BQ)-VO在3 M Zn(CF 3} SO ₃ ) ₂中具有良好的电化学性能。并在电解液中加入 Al ³⁺，它显示出提高的倍率性能和显着增强的循环性能。其平均容量在 0.2/1 A g ^-1时达到了前所未有的 446/400 mAh g ^{-1值，在 1 A g -1} (411 mAh g ^-1 ) 下，在 550 次循环中容量保持率超过 100% ，这与（00 l）面上无序和有序之间的动态可逆转换有关。在放电过程中将Al ³⁺插入到(1, 2, 3-BQ)-VO 的内沟道中，不仅起到层间柱的作用，防止层状结构坍塌，而且可以提高晶体的结晶度。带电 (1, 2, 3-BQ)-VO 样品由于来自中间层 (00 l) 方面。并且样品中的BQ和Al ^{3+ 双柱}可以促进活性位点的暴露，从而提高存储容量。此外，密度泛函理论 (DFT) 计算揭示了(1, 2, 3-BQ)-VO 中 0.85 eV的小 Zn ^{2+扩散势垒。}此外，发现含有Al ³⁺的电解液不仅有利于(1, 2, 3-BQ)-VO正极的改性，而且可以抑制锌负极的锌枝晶形成。