As integrated circuits shrink in feature size to 10 nm, the requirements of pitting defects on the cobalt (Co) surface become more stringent during the chemical mechanical polishing of Co interconnects. In this work, the corrosion inhibition effects of benzotriazole (BTA) and its two derivatives, 5-methyl benzotriazole (MBTA) and 2,2′-[[(methyl-1H-benzotriazol-1-yl)methyl]imino]bis-Ethanol (TT-LYK) in the slurry at pH 9 were studied by electrochemical methods, contact angle measurement, and scanning electron microscopy (SEM). The adsorption process of the three inhibitors on the cobalt surface could be described by the Langmuir isotherm model. All the azole corrosion inhibitors belong to anodic corrosion inhibitors for Co in a weak alkaline environment. When 8 mM BTA, MBTA and TT-LYK was added to the base solution containing 0.15 wt% glycine and 0.5 wt% H₂O₂, respectively, the corrosion inhibition efficiency reached 87.67%, 92.63% and 95.38%. In addition, the SEM results show that there are almost no pitting defects on the Co surface protected by TT-LYK. Furthermore, the quantum chemical parameters of the three inhibitors were calculated by molecular dynamics and density functional theory. The experimental data support the results of the density functional theory and Molecular dynamic simulation.

随着集成电路的特征尺寸缩小到 10 nm，化学机械抛光过程中对钴 (Co) 表面的点蚀缺陷的要求变得更加严格 的 Co 互连。在这项工作中，苯并三唑 (BTA) 及其两种衍生物 5-甲基苯并三唑 (MBTA) 和 2,2'-[[(甲基-1H-苯并三唑-1-基)甲基]亚氨基]双-通过电化学方法、接触角测量和扫描电子显微镜 (SEM) 研究了 pH 为 9 的浆料中的乙醇 (TT-LYK)。三种抑制剂在钴表面的吸附过程可以用朗缪尔等温线模型来描述。所有的唑类缓蚀剂都属于弱碱性环境下的Co阳极缓蚀剂。当 8 mM BTA、MBTA 和 TT-LYK 被添加到含有 0.15 wt% 甘氨酸和 0.5 wt% H ₂ O _{2的基础溶液中}，缓蚀效率分别达到87.67%、92.63%和95.38%。此外，SEM结果表明，TT-LYK保护的Co表面几乎没有点蚀缺陷。此外，通过分子动力学和密度泛函理论计算了三种抑制剂的量子化学参数。实验数据支持密度泛函理论和分子动力学模拟的结果。