Graphene-Assisted Epitaxy of High-Quality GaN Films on GaN Templates,Advanced Optical Materials

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Graphene-Assisted Epitaxy of High-Quality GaN Films on GaN Templates
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2022-09-30 , DOI: 10.1002/adom.202201262
Tao Feng _{1,

2} , Shuo Zhang _{1,

2} , Kailai Yang _{1,

2} , Qi Chen _{1,

2} , Meng Liang _{1,

2} , Jianchang Yan _{1,

2} , Xiaoyan Yi _{1,

2} , Junxi Wang _{1,

2} , Jinmin Li _{1,

2} , Zhiqiang Liu _{1,

2}

Affiliation

Graphene (Gr)-assisted epitaxy of semiconductors has been demonstrated as a revolutionary strategy for the fabrication of nitride materials and flexible devices. However, till now, most of the GaN epitaxy assisted by Gr is performed on thermally stable foreign substrates because Gr suffers obvious deterioration due to the decomposition of GaN substrate. Thus, large lattice and thermal mismatches still exist and inevitably lead to a high density of dislocations in nitrides. To address this issue, here, the Gr-assisted epitaxy of high-quality GaN films on GaN templates is demonstrated by constructing specially designed self-organized defective (SOD) Gr as a buffer layer. The SOD Gr allows for the spontaneous relaxation of strain in GaN epilayers by weakening the interfacial interactions; and thus, blocks the upward spread of threading dislocations in GaN templates. Therefore, screw and edge dislocation densities in GaN epilayers show reductions of 51% and 62%, respectively, compared to that in homoepitaxy. Based on the GaN film grown on SOD Gr, the as-fabricated blue light-emitting diode exhibits a 17% enhancement of light output power and a better emission wavelength stability than that without Gr. This work opens a practical pathway for the growth of high-quality nitrides and manufacturing of high-performance nitride-based devices.

中文翻译：

GaN 模板上高质量 GaN 薄膜的石墨烯辅助外延

石墨烯 (Gr) 辅助半导体外延已被证明是制造氮化物材料和柔性器件的革命性策略。然而，到目前为止，大部分由 Gr 辅助的 GaN 外延是在热稳定的外来衬底上进行的，因为 Gr 由于 GaN 衬底的分解而遭受明显的劣化。因此，大的晶格和热失配仍然存在并且不可避免地导致氮化物中的高位错密度。为了解决这个问题，在这里，通过构建专门设计的自组织缺陷 (SOD) Gr 作为缓冲层，证明了在 GaN 模板上 Gr 辅助外延高质量 GaN 薄膜。SOD Gr 通过削弱界面相互作用允许 GaN 外延层中应变的自发弛豫；因此，阻止了 GaN 模板中穿透位错的向上扩展。因此，与同质外延相比，GaN 外延层中的螺位错和刃位错密度分别降低了 51% 和 62%。基于在SOD Gr上生长的GaN薄膜，所制造的蓝色发光二极管比没有Gr的光输出功率提高了17%，发射波长稳定性更好。这项工作为高质量氮化物的生长和高性能氮化物基器件的制造开辟了一条实用途径。所制造的蓝色发光二极管比没有 Gr 的光输出功率提高了 17%，并且发射波长稳定性更好。这项工作为高质量氮化物的生长和高性能氮化物基器件的制造开辟了一条实用途径。所制造的蓝色发光二极管比没有 Gr 的光输出功率提高了 17%，并且发射波长稳定性更好。这项工作为高质量氮化物的生长和高性能氮化物基器件的制造开辟了一条实用途径。

更新日期：2022-09-30

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