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Large-Area Flexible Memory Arrays of Oriented Molecular Ferroelectric Single Crystals with Nearly Saturated Polarization
Small ( IF 13.0 ) Pub Date : 2022-09-26 , DOI: 10.1002/smll.202203882 Mingsheng Xu 1 , Chenxu Sheng 1 , Qiuyi Zhang 1 , Xiaojie Zhou 1 , Bobo Tian 2 , Luqiu Chen 2 , Yichen Cai 1 , Jianping Li 1 , Jiao Wang 1 , Yongfa Xie 3 , Xinxia Qiu 1 , Wenchong Wang 4 , Shisheng Xiong 1 , Chunxiao Cong 1, 5 , Zhi-Jun Qiu 1 , Ran Liu 1 , Laigui Hu 1
Small ( IF 13.0 ) Pub Date : 2022-09-26 , DOI: 10.1002/smll.202203882 Mingsheng Xu 1 , Chenxu Sheng 1 , Qiuyi Zhang 1 , Xiaojie Zhou 1 , Bobo Tian 2 , Luqiu Chen 2 , Yichen Cai 1 , Jianping Li 1 , Jiao Wang 1 , Yongfa Xie 3 , Xinxia Qiu 1 , Wenchong Wang 4 , Shisheng Xiong 1 , Chunxiao Cong 1, 5 , Zhi-Jun Qiu 1 , Ran Liu 1 , Laigui Hu 1
Affiliation
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Molecular ferroelectrics (MFs) have been proven to demonstrate excellent properties even comparable to those of inorganic counterparts usually with heavy metals. However, the validation of their device applications is still at the infant stage. The polycrystalline feature of conventionally obtained MF films, the patterning challenges for microelectronics and the brittleness of crystalline films significantly hinder their development for organic integrated circuits, as well as emerging flexible electronics. Here, a large-area flexible memory array is demonstrated of oriented molecular ferroelectric single crystals (MFSCs) with nearly saturated polarization. Highly-uniform MFSC arrays are prepared on large-scale substrates including Si wafers and flexible substrates using an asymmetric-wetting and microgroove-assisted coating (AWMAC) strategy. Resultant flexible memory arrays exhibit excellent nonvolatile memory properties with a low-operating voltage of <5 V, i.e., nearly saturated ferroelectric polarization (6.5 µC cm−2), and long bending endurance (>103) under various bending radii. These results may open an avenue for scalable flexible MF electronics with high performance.
中文翻译：
近饱和极化定向分子铁电单晶大面积柔性存储阵列
分子铁电体 (MF) 已被证明具有优异的性能，甚至可以与通常含有重金属的无机对应物相媲美。然而，他们的设备应用程序的验证仍处于初级阶段。传统方法获得的 MF 薄膜的多晶特性、微电子的图案化挑战以及晶体薄膜的脆性严重阻碍了它们在有机集成电路以及新兴柔性电子产品中的发展。在这里，大面积柔性存储器阵列展示了具有近饱和极化的定向分子铁电单晶 (MFSC)。使用不对称润湿和微槽辅助涂层 (AWMAC) 策略在包括 Si 晶圆和柔性基板在内的大规模基板上制备高度均匀的 MFSC 阵列。-2 )，以及在各种弯曲半径下的长弯曲耐久性(>10 3 )。这些结果可能为可扩展的高性能柔性 MF 电子产品开辟一条道路。
更新日期：2022-09-26
中文翻译：
近饱和极化定向分子铁电单晶大面积柔性存储阵列
分子铁电体 (MF) 已被证明具有优异的性能，甚至可以与通常含有重金属的无机对应物相媲美。然而，他们的设备应用程序的验证仍处于初级阶段。传统方法获得的 MF 薄膜的多晶特性、微电子的图案化挑战以及晶体薄膜的脆性严重阻碍了它们在有机集成电路以及新兴柔性电子产品中的发展。在这里，大面积柔性存储器阵列展示了具有近饱和极化的定向分子铁电单晶 (MFSC)。使用不对称润湿和微槽辅助涂层 (AWMAC) 策略在包括 Si 晶圆和柔性基板在内的大规模基板上制备高度均匀的 MFSC 阵列。-2 )，以及在各种弯曲半径下的长弯曲耐久性(>10 3 )。这些结果可能为可扩展的高性能柔性 MF 电子产品开辟一条道路。
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