Plasmonic Resonance-Enhanced Low Dark Current and High-Speed InP/InGaAs Uni-Traveling-Carrier Photodiode,ACS Applied Electronic Materials

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Plasmonic Resonance-Enhanced Low Dark Current and High-Speed InP/InGaAs Uni-Traveling-Carrier Photodiode
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2022-09-22 , DOI: 10.1021/acsaelm.2c01052
Bojian Zhang ₁ , Yingjian Liu ₁ , Kai Jiang ₁ , Fangli Wang ₁ , Muyi Yang ₁ , Songpo Guo ₁ , Zhengfu Han _{1,

2} , Liang Wang _{1,

2}

Affiliation

High-speed and high-efficiency photodiodes are especially beneficial for exponential data communication traffic growth. However, improving high responsivity while maintaining low dark current and high bandwidth remains a challenge for vertical detector design. This study proposes a plasmonic InP/InGaAs uni-traveling-carrier photodiode with optical antenna arrays, which exhibits a low dark current of 2.52 nA at a −3 V bias voltage, a high bandwidth of over 40 GHz, and a high responsivity of 0.12 A/W. The absorption efficiency of the photodiode shows 2-fold improvement using plasmonic resonance generated by nanodisks at 1550 nm. This work designs a low dark current and high-bandwidth photodiode with improved responsivity, which provides a potential method for high-speed vertical photodiode design.

中文翻译：

等离子体共振增强型低暗电流和高速 InP/InGaAs 单行载波光电二极管

高速和高效的光电二极管对于指数级数据通信流量增长尤其有利。然而，在保持低暗电流和高带宽的同时提高高响应度仍然是垂直探测器设计的挑战。本研究提出了一种具有光学天线阵列的等离子体 InP/InGaAs 单行载波光电二极管，在 -3 V 偏置电压下，其暗电流低至 2.52 nA，带宽超过 40 GHz，响应度高达 0.12空调。使用纳米盘在 1550 nm 处产生的等离子体共振，光电二极管的吸收效率提高了 2 倍。这项工作设计了一种低暗电流、高带宽、响应度更高的光电二极管，为高速垂直光电二极管设计提供了一种潜在的方法。

更新日期：2022-09-22

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