Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped ZnO Films: Strong Enhancement Effect of Titanium Codoping,ACS Applied Materials & Interfaces

当前位置： X-MOL 学术 › ACS Appl. Mater. Interfaces › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped ZnO Films: Strong Enhancement Effect of Titanium Codoping
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2022-09-21 , DOI: 10.1021/acsami.2c08003
Chengtao Xia ₁ , Jinxin Chen ₁ , Tong Zhao ₁ , Linlin Fan ₁ , Deren Yang ₁ , Xiangyang Ma ₁

Affiliation

We report on the visible and near-infrared electroluminescence (EL) from the light-emitting device (LED) based on the erbium (Er)-doped ZnO (ZnO:Er)/SiO₂/n⁺-Si heterostructure, wherein an ∼10 nm thick SiO₂ intermediate layer serves as the energy plateau for producing hot electrons, which come from n⁺-Si via the trap-assisted tunneling mechanism. These hot electrons excite the doped Er³⁺ ions by inelastic collision, enabling the Er-related EL from the aforementioned LED. More importantly, by means of codoping the appropriate content of titanium (Ti) into the ZnO:Er film, the aforementioned Er-related emissions can be significantly enhanced. The density functional theory calculations indicate that the Ti-codoping improves rather than degrades the symmetry of the crystal field around the optically active Er³⁺ ions, hence not increasing the intra-4f transition probabilities of Er³⁺ ions. However, it is found that Ti-codoping nearly eliminates the segregation of Er³⁺ ions near the ZnO/SiO₂ interface. Moreover, Ti-codoping is derived to result in a number of Zn vacancies, which provide the sites for incorporating Er³⁺ ions in the ZnO matrix. For the above two reasons, the Ti-codoping promotes the incorporation of optically active Er³⁺ ions into the ZnO matrix, thus enhancing the EL from the aforementioned LED.

中文翻译：

掺铒 ZnO 薄膜的硅基发光器件的电致发光：钛共掺杂的强增强效应

我们报告了基于铒（Er）掺杂的ZnO（ZnO：Er）/SiO ₂ /n ⁺ -Si异质结构的发光器件（LED）的可见光和近红外电致发光（EL），其中~ 10 nm 厚的 SiO ₂中间层用作产生热电子的能量平台，热电子来自 n ⁺ -Si 通过陷阱辅助隧穿机制。这些热电子激发掺杂的 Er ³⁺离子通过非弹性碰撞，使上述 LED 的 Er 相关 EL 成为可能。更重要的是，通过将适当含量的钛 (Ti) 共掺杂到 ZnO:Er 薄膜中，可以显着增强上述与 Er 相关的发射。密度泛函理论计算表明，Ti共掺杂改善而不是降低光学活性Er ³⁺离子周围晶体场的对称性，因此不会增加Er 3+ 离子的4f内跃迁^概率。然而，发现Ti共掺杂几乎消除了在ZnO/SiO ₂界面附近的Er ^{3+离子的偏析。}此外，Ti 共掺杂导致许多 Zn 空位，这为掺入 Er 提供了位点^{ZnO 基质中的3+}离子。由于上述两个原因，Ti共掺杂促进了光学活性Er ³⁺离子结合到ZnO基体中，从而增强了上述LED的EL。

更新日期：2022-09-21

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南