The crystal phase combination, relative density, microstructure, varistor properties and dielectric properties of La₂O₃-doped ZnO-Bi₂O₃-based varistor at a furnace temperature of 950 °C were investigated under the electric field of 300 V/cm within 35 s. Obtained samples were fully densified and uniform in microstructure. The effect of doping with different contents of La₂O₃ on flash-sintered ZnO-Bi₂O₃-based varistor was systematically studied. The results showed that when doping La₂O₃ was 0 mol%, 0.1 mol%, 0.2 mol% and 0.3 mol%, the densities of the samples were 91.5%, 90.5%, 96.1% and 95.1%, respectively. When the La₂O₃ doping amount was 0.2 mol%, the nonlinear coefficient was the highest of 32.9, the leakage current was the lowest of 1.1μA, and the dielectric loss was less than 0.1. Therefore, uniform microstructure and excellent electrical property can be obtained by preparing La₂O₃-doped ZnO varistor ceramic via flash sintering.

_{研究了La 2} O ₃掺杂的ZnO-Bi ₂ O ₃基压敏电阻在300 V/cm电场下在950 ℃炉温下的晶相组合、相对密度、微观结构、压敏电阻性能和介电性能。35 秒内。获得的样品完全致密且微观结构均匀。系统研究了掺杂不同含量La ₂ O ₃对闪烧ZnO-Bi ₂ O ₃基压敏电阻的影响。结果表明，当掺杂 La ₂ O ₃分别为 0 mol%、0.1 mol%、0.2 mol% 和 0.3 mol%，样品的密度分别为 91.5%、90.5%、96.1% 和 95.1%。当La ₂ O ₃掺杂量为0.2 mol%时，非线性系数最高为32.9，漏电流最低为1.1μA，介电损耗小于0.1。_{因此，采用快速烧结法制备La 2} O ₃掺杂的ZnO压敏电阻陶瓷可以获得均匀的微观结构和优异的电性能。