Phase-Specific Vapor–Liquid–Solid Growth of GeSe and GeSe2 van der Waals Nanoribbons and Formation of GeSe–GeSe2 Heterostructures,Chemistry of Materials

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Phase-Specific Vapor–Liquid–Solid Growth of GeSe and GeSe2 van der Waals Nanoribbons and Formation of GeSe–GeSe2 Heterostructures
Chemistry of Materials ( IF 7.2 ) Pub Date : 2022-09-20 , DOI: 10.1021/acs.chemmater.2c02162
Eli Sutter _{1,

2} , Jacob S. French ₃ , Peter Sutter ₃

Affiliation

Group IV (Ge, Sn) chalcogenides differ from most other two-dimensional (2D)/layered semiconductors in their ability to crystallize both as stable mono- and dichalcogenides. The associated diversity in structure and properties presents the challenge of identifying conditions for the selective growth of the different crystalline phases, as well as opportunities for phase conversion and materials integration/interface formation in heterostructures. Here, we discuss the phase-selective synthesis of free-standing GeSe and GeSe₂ nanoribbons in a vapor–liquid–solid growth process over Au catalyst nanoparticles. Electron microscopy shows that the two types of ribbons adopt high-quality van der Waals structures with layering in the ribbon plane and with the ribbon axis aligned with the b-axis of GeSe and GeSe₂, respectively. Nonspecific growth gives rise to a tapered morphology and, in the case of GeSe₂, leads to nucleation of misoriented crystallites on the ribbon surface. The partial transformation of GeSe ribbons by selenization, finally reacts the outermost layers and edges to GeSe₂, thus producing GeSe–GeSe₂ core–shell heterostructures. Cathodoluminescence spectroscopy of as-grown GeSe ribbons and of GeSe–GeSe₂ hybrids shows a marked enhancement of the luminescence intensity due to surface passivation by wide-band gap GeSe₂ (E_g = 2.5 eV). Our results support applications of germanium mono- and dichalcogenides as well as their heterostructures in areas such as optoelectronics and photovoltaics.

中文翻译：

GeSe 和 GeSe2 范德华纳米带的特定相汽-液-固生长和 GeSe-GeSe2 异质结构的形成

IV 族 (Ge, Sn) 硫属化物与大多数其他二维 (2D)/层状半导体的不同之处在于它们能够以稳定的单硫属和双硫属化物结晶。结构和性质的相关多样性提出了确定不同晶相选择性生长的条件的挑战，以及异质结构中相转换和材料集成/界面形成的机会。在这里，我们讨论了在金催化剂纳米粒子上的气相-液-固生长过程中相选择性合成独立的 GeSe 和 GeSe _{2纳米带。}电子显微镜显示，这两种碳带均采用高质量范德华结构，在碳带平面内分层，碳带轴与b轴对齐。GeSe 和 GeSe ₂的-轴。非特异性生长产生锥形形态，并且在 GeSe ₂的情况下，导致带表面上取向错误的微晶成核。通过硒化对 GeSe 带的部分转变，最终使最外层和边缘与 GeSe ₂反应，从而产生 GeSe-GeSe ₂核-壳异质结构。生长的 GeSe 带和 GeSe-GeSe ₂杂化物的阴极发光光谱表明，由于宽带隙 GeSe ₂ ( E _g= 2.5 电子伏特）。我们的结果支持锗单和二硫属化物及其异质结构在光电和光伏等领域的应用。

更新日期：2022-09-20

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