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Self-Powered Solar-Blind Photodetectors Based on Vertically Aligned GaN@Ga2O3 Core–Shell Nanowire Arrays
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2022-09-15 , DOI: 10.1021/acsanm.2c02836 Shan Ding 1 , Kai Chen 1 , Xiangqian Xiu 1 , Yuewen Li 1 , Liying Zhang 1 , Pengfei Shao 1 , Zili Xie 1 , Tao Tao 1 , Bin Liu 1 , Peng Chen 1 , Dunjun Chen 1 , Rong Zhang 1 , Youdou Zheng 1
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2022-09-15 , DOI: 10.1021/acsanm.2c02836 Shan Ding 1 , Kai Chen 1 , Xiangqian Xiu 1 , Yuewen Li 1 , Liying Zhang 1 , Pengfei Shao 1 , Zili Xie 1 , Tao Tao 1 , Bin Liu 1 , Peng Chen 1 , Dunjun Chen 1 , Rong Zhang 1 , Youdou Zheng 1
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The self-powered photodetector has recently received wide attention as a fundamental component of energy-saving optoelectronic systems. In this study, the GaN@Ga2O3 core–shell nanowire arrays (NAs) were used as the photoanode for the self-powered solar-blind photoelectrochemical-type photodetectors (PEC-PDs). The vertically aligned GaN@Ga2O3 core–shell NAs on the GaN template was fabricated by the inductively coupled plasma etching combined with the thermal oxidation process. Under 255 nm illumination without an external power supply, the device exhibits a maximum responsivity of 93.48 mA/W, yielding a high external quantum efficiency of 45.54%, which shows one of the best values among the reported solar-blind Ga2O3-based PEC-PDs. Furthermore, the device shows a fast response speed (τr = 25 ms, τd = 5 ms) and good stability. Such excellent performance under zero bias may benefit from the superior light-absorbing capability of the vertical NAs, the good solid/liquid contact realized by the nanostructures, and the efficient photogenerated carrier separation driven by the double built-in electric field. This work provides a simple and feasible route to construct high-performance solar-blind Ga2O3-based PEC-PDs.
中文翻译：
基于垂直排列的 GaN@Ga2O3 核壳纳米线阵列的自供电日盲光电探测器
自供电光电探测器最近作为节能光电系统的基本组成部分受到了广泛关注。在这项研究中，GaN@Ga 2 O 3核壳纳米线阵列（NAs）被用作自供电日盲光电化学型光电探测器（PEC-PDs）的光电阳极。GaN模板上垂直排列的GaN@Ga 2 O 3核壳NAs是通过电感耦合等离子体蚀刻结合热氧化工艺制造的。在没有外部电源的 255 nm 照明下，该器件表现出 93.48 mA/W 的最大响应度，产生了 45.54% 的高外部量子效率，这是已报道的日盲 Ga 2中的最佳值之一基于O 3的PEC-PD。此外，该器件显示出快速的响应速度（τ r = 25 ms，τ d = 5 ms）和良好的稳定性。这种零偏压下的优异性能可能得益于垂直NAs的优异吸光能力、纳米结构实现的良好固/液接触以及双内建电场驱动的高效光生载流子分离。该工作为构建高性能日盲Ga 2 O 3基PEC-PD提供了一种简单可行的途径。
更新日期：2022-09-15
中文翻译：
基于垂直排列的 GaN@Ga2O3 核壳纳米线阵列的自供电日盲光电探测器
自供电光电探测器最近作为节能光电系统的基本组成部分受到了广泛关注。在这项研究中，GaN@Ga 2 O 3核壳纳米线阵列（NAs）被用作自供电日盲光电化学型光电探测器（PEC-PDs）的光电阳极。GaN模板上垂直排列的GaN@Ga 2 O 3核壳NAs是通过电感耦合等离子体蚀刻结合热氧化工艺制造的。在没有外部电源的 255 nm 照明下，该器件表现出 93.48 mA/W 的最大响应度，产生了 45.54% 的高外部量子效率，这是已报道的日盲 Ga 2中的最佳值之一基于O 3的PEC-PD。此外，该器件显示出快速的响应速度（τ r = 25 ms，τ d = 5 ms）和良好的稳定性。这种零偏压下的优异性能可能得益于垂直NAs的优异吸光能力、纳米结构实现的良好固/液接触以及双内建电场驱动的高效光生载流子分离。该工作为构建高性能日盲Ga 2 O 3基PEC-PD提供了一种简单可行的途径。
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