使用 AFE/FE (ZrO2/HZO) 双层异质结构和高压退火在变形相边界附近获得高 κ (∼59) 和低 EOT (∼3.8 Å) 的新方法,ACS Applied Materials & Interfaces

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使用 AFE/FE (ZrO2/HZO) 双层异质结构和高压退火在变形相边界附近获得高 κ (∼59) 和低 EOT (∼3.8 Å) 的新方法
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2022-09-15 , DOI: 10.1021/acsami.2c08691
Venkateswarlu Gaddam ₁ , Giuk Kim ₁ , Taeho Kim ₁ , Minhyun Jung ₁ , Chaeheon Kim ₁ , Sanghun Jeon ₁

Affiliation

我们在此提出了一种新的等厚 AFE/FE (ZrO ₂ /HZO) 双层堆叠异质结构薄膜方法，用于在互补金属氧化物半导体中实现 4.1 Å 的等效氧化物厚度 (EOT) 和 56 的介电常数 (κ) ( CMOS）兼容金属-铁电-金属（MFM）电容器，采用高压退火（HPA）技术。低 EOT 和高 κ 值是通过在场循环效应后仔细优化 AFE/FE 薄膜厚度和变形相边界 (MPB) 附近的 HPA 条件来实现的。稳定的漏电流密度 ( J < 10 ^–7 A/cm ²在±0.8 V）在室温下测量的3/3 nm双层堆叠膜（κ = 56和EOT = 4.1 Å）中发现。与以前的工作相比，我们的显着成就源于 FE 和 AFE 薄膜之间的界面耦合以及 HPA 形成的高质量晶体结构。动力学稳定的氧化铪薄膜导致双层薄膜的晶粒尺寸小，从而降低了漏电流密度。此外，在 333 K 时发现 59 的较高 κ 值和 3.4 Å 的较低 EOT。然而，在 273 K 时发现稳定的漏电流密度，高 κ 值为 53，EOT 为 3.85 Å，J < 10 ^–7 A /cm ². 这是使用与 CMOS 兼容的氧化铪和 TiN 电极记录的最低 EOT，它对未来的动态随机存取存储器 (DRAM) 技术具有重要意义。

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Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing

We present herewith a novel approach of equally thick AFE/FE (ZrO₂/HZO) bilayer stack heterostructure films for achieving an equivalent oxide thickness (EOT) of 4.1 Å with a dielectric constant (κ) of 56 in complementary metal-oxide semiconductor (CMOS) compatible metal–ferroelectric–metal (MFM) capacitors using a high-pressure annealing (HPA) technique. The low EOT and high κ values were achieved by careful optimization of AFE/FE film thicknesses and HPA conditions near the morphotropic phase boundary (MPB) after field cycling effects. Stable leakage current density (J < 10^–7 A/cm² at ±0.8 V) was found at 3/3 nm bilayer stack films (κ = 56 and EOT = 4.1 Å) measured at room temperature. In comparison with previous work, our remarkable achievement stems from the interfacial coupling between FE and AFE films as well as a high-quality crystalline structure formed by HPA. Kinetically stabilized hafnia films result in a small grain size in bilayer films, leading to reducing the leakage current density. Further, a higher κ value of 59 and lower EOT of 3.4 Å were found at 333 K. However, stable leakage current density was found at 273 K with a high κ value of 53 and EOT of 3.85 Å with J < 10^–7 A/cm². This is the lowest recorded EOT employing hafnia and TiN electrodes that are compatible with CMOS, and it has important implications for future dynamic random access memory (DRAM) technology.

更新日期：2022-09-15

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