Field-effect transistor (FET) sensors require not only high sensitivity but also excellent regeneration ability before widespread applications are possible. Although some regenerative FETs have been reported, their lowest limit of detection (LoD) barely achieves 10⁻¹⁵ mol L⁻¹. Here, we develop a graphene FET with a regenerative sensing interface based on dynamic covalent chemistry (DCvC). The LoD down to 5.0 × 10⁻²⁰ mol L⁻¹ remains even after 10 regenerative cycles, around 4–5 orders of magnitude lower than existing transistor sensors. Owing to its ultra-sensitivity, regeneration ability, and advantages such as simplicity, low cost, label-free and real-time response, the FET sensor based on DCvC is valuable in applications such as medical diagnosis, environment monitoring, etc.

中文翻译：

---

基于动态共价化学的超灵敏再生晶体管传感器

场效应晶体管 (FET) 传感器不仅需要高灵敏度，还需要出色的再生能力，才能实现广泛应用。尽管已经报道了一些再生 FET，但它们的最低检测限 (LoD) 几乎没有达到 10 ^{- 15} mol L ^{- 1}。在这里，我们开发了一种基于动态共价化学 (DCvC) 的具有再生传感界面的石墨烯 FET。LoD 低至 5.0 × 10 ^{- 20} mol L ^{- 1}即使在 10 次再生循环后仍然存在，比现有晶体管传感器低约 4-5 个数量级。基于DCvC的场效应晶体管传感器具有超灵敏、再生能力强、简单、低成本、免标记、实时响应等优点，在医疗诊断、环境监测等应用领域具有重要价值。