Field-effect transistor (FET) sensors require not only high sensitivity but also excellent regeneration ability before widespread applications are possible. Although some regenerative FETs have been reported, their lowest limit of detection (LoD) barely achieves 10⁻¹⁵ mol L⁻¹. Here, we develop a graphene FET with a regenerative sensing interface based on dynamic covalent chemistry (DCvC). The LoD down to 5.0 × 10⁻²⁰ mol L⁻¹ remains even after 10 regenerative cycles, around 4–5 orders of magnitude lower than existing transistor sensors. Owing to its ultra-sensitivity, regeneration ability, and advantages such as simplicity, low cost, label-free and real-time response, the FET sensor based on DCvC is valuable in applications such as medical diagnosis, environment monitoring, etc.

中文翻译：

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基于动态共价化学的超灵敏再生晶体管传感器


场效应晶体管（FET）传感器在广泛应用之前不仅需要高灵敏度，还需要出色的再生能力。尽管已经报道了一些再生 FET，但它们的最低检测限 (LoD) 勉强达到 10 ^{− 15} mol L ^{− 1} 。在这里，我们开发了一种具有基于动态共价化学 (DCvC) 的再生传感接口的石墨烯 FET。即使在 10 个再生周期后，LoD 仍降至 5.0 × 10 ^{− 20} mol L ^{− 1} ，比现有晶体管传感器低约 4-5 个数量级。基于DCvC的FET传感器由于其超灵敏、再生能力以及简单、低成本、免标记和实时响应等优点，在医疗诊断、环境监测等应用中具有重要价值。