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Highly Efficient Broadband Near-Infrared Luminescence with Zero-Thermal-Quenching in Garnet Y3In2Ga3O12:Cr3+ Phosphors
Chemistry of Materials ( IF 7.2 ) Pub Date : 2022-09-15 , DOI: 10.1021/acs.chemmater.2c02174
Chaojie Li 1 , Jiyou Zhong 1
Affiliation  

Broadband near-infrared (NIR) light source based on phosphor-converted light-emitting-diode (pc-LED) is crucial for applications in medical diagnosis, food quality analysis, and night vision fields, motivating the development of highly efficient and thermal robust NIR phosphor materials. Herein, a novel Cr3+-doped garnet phosphor Y3In2Ga3O12:Cr3+ emerges from a fundamental study of the Ln3In2Ga3O12 (Ln = La, Gd, Y, and Lu) family. Upon 450 nm excitation, this material presents a broadband NIR emission covering 650–1100 nm with a peak located at 760 nm and a full width at half maximum of 125 nm. This material also possesses an ultrahigh internal quantum efficiency (IQE = 91.6%) and absorption efficiency (AE = 46.6%), resulting in an external quantum efficiency as high as 42.7%. Moreover, the emission intensity of this material at 150 °C maintains 100% of the initial intensity, showing a rare zero-thermal-quenching property. Fabricating an NIR pc-LED device by using this material, an excellent NIR output power of 68.4 mW with a photoelectric efficiency of 15.9% under 150 mA driving current can be obtained, which exhibits much better performance than the devices fabricated by using some reported efficient NIR materials. Therefore, this work not only provides an ultraefficient and thermally robust broadband NIR material for spectroscopy application but also contributes to the foundation of design rules of NIR materials with high performance.

中文翻译:

石榴石 Y3In2Ga3O12:Cr3+ 荧光粉中具有零热猝灭的高效宽带近红外发光

基于磷光体转换发光二极管 (pc-LED) 的宽带近红外 (NIR) 光源对于医疗诊断、食品质量分析和夜视领域的应用至关重要,促进了高效和耐热性的发展近红外荧光粉材料。在此,一种新型的 Cr 3+掺杂石榴石荧光粉 Y 3 In 2 Ga 3 O 12 :Cr 3+源于对 Ln 3 In 2 Ga 3 O 12的基础研究。(Ln = La、Gd、Y 和 Lu) 族。在 450 nm 激发下,该材料呈现出覆盖 650-1100 nm 的宽带 NIR 发射,峰值位于 760 nm,半峰全宽为 125 nm。该材料还具有超高的内量子效率(IQE = 91.6%)和吸收效率(AE = 46.6%),外量子效率高达42.7%。此外,该材料在 150 ℃时的发光强度保持 100% 的初始强度,表现出罕见的零热猝灭特性。使用该材料制作近红外 pc-LED 器件,在 150 mA 驱动电流下可获得 68.4 mW 的优异 NIR 输出功率和 15.9% 的光电效率,这比使用一些报道的高效器件制造的器件表现出更好的性能。近红外材料。所以,
更新日期:2022-09-15
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