C54-TiSi₂ can be used as the material in ultra-large scale integrated circuits and vacuum microelectronics devices due to its low resistivity. However, Ti–Si intermediate compounds are inevitably produced during the preparation of C54-TiSi₂ by conventional processes. Therefore, this study proposes the preparation of C54-TiSi₂ based on electromagnetic directional solidification technology with hypoeutectic Ti-53.98 wt pct Si alloy as the raw material. The X-ray diffraction, microstructure, and impurity bias thermodynamic analysis of the enriched layers confirmed the lattice parameters of C54-TiSi₂, revealed the phase separation law, and quantified the impurity bias ability, respectively. The results showed that C54-TiSi₂ without Ti–Si intermediate was successfully prepared by electromagnetic directional solidification technology. The purity in the C54-TiSi₂ enrichment layer can be greater than 99.66 wt pct, and the optimal removal rates of Fe and Al are 90.36 and 84.78 pct, respectively. The equilibrium segregation coefficients of Fe, Al, and Si during the electromagnetic directional solidification of Ti-53.98 wt pct Si melt are k_Fe = 2.25 × 10^–4, k_Al = 2.69 × 10^–3, and k_Si = 2.2 × 10^–1. The theoretical and actual removal rates of impurities decrease with the increase of solidified layer thickness. In addition, because the segregation coefficient of Si is much larger than that of Fe and Al, the content of Si is much higher than that of Fe and Al at the same height, so Si is the key impurity that hinders further purification of C54-TiSi₂. This study can lay a theoretical foundation and experimental support for the preparation of C54-TiSi₂ and further purification of Ti–Si alloy.

C54-TiSi ₂具有低电阻率，可用作超大规模集成电路和真空微电子器件的材料。然而，在通过常规工艺制备 C54-TiSi ₂的过程中，不可避免地会产生 Ti-Si 中间体化合物。因此，本研究提出以亚共晶Ti-53.98 wt pct Si合金为原料，采用电磁定向凝固技术制备C54-TiSi _{2 。}富集层的X射线衍射、微观结构和杂质偏压热力学分析分别证实了C54-TiSi ₂的晶格参数，揭示了相分离规律，量化了杂质偏压能力。结果表明，C54-TiSi ₂采用电磁定向凝固技术成功制备了不含Ti-Si中间体。C54-TiSi ₂富集层的纯度可大于99.66 wt pct，Fe和Al的最佳去除率分别为90.36和84.78 pct。Ti-53.98 wt pct Si熔体电磁定向凝固过程中Fe、Al和Si的平衡偏析系数为k _Fe  = 2.25 × 10 ^–4 , k _Al  = 2.69 × 10 ^–3 , k _Si  = 2.2 × 10 ^–1. 杂质的理论和实际去除率随着凝固层厚度的增加而降低。另外，由于Si的偏析系数远大于Fe和Al的偏析系数，在相同高度Si的含量远高于Fe和Al，所以Si是阻碍C54-进一步提纯的关键杂质。钛硅₂ . _{该研究可为C54-TiSi 2}的制备和Ti-Si合金的进一步提纯奠定理论基础和实验支持。