Improving the performance of optical oxygen sensors can be accomplished by adding metal oxide semiconductors (MOSs) additives to the composition comprising an oxygen-sensing agent immobilized in a polymeric thin film. For several decades, MOSs have attracted great interest in gas sensors due to their high sensitivity to many target gasses. Herein, meso-tetraphenylporphyrin (H₂TPP) dye was immobilized into the poly(1-trimethylsilyl-1-propyne) (poly(TMSP)) silicone rubber in the presence of NiO, SnO₂, Ni:SnO₂ metal oxide particles as additives, and their thin films were prepared to investigate oxygen-sensitive optical chemical sensor properties. The characterizations of the synthesized metal oxide powders were carried out through XPS, XRD, FT-IR, PL spectroscopy and SEM methods. Intensity-based spectra and decay kinetics of H₂TPP-based thin films were investigated for the concentration range of 0%–100% [O₂]. The oxygen sensitivity (I₀/I₁₀₀) of the porphyrin was calculated as 70%. Whereas the relative signal intensity values of H₂TPP-based sensor slides were measured as 75%, 80%, and 88% in the presence of NiO, SnO₂, Ni:SnO₂ additives, respectively. The H₂TPP in combination with Ni:SnO₂ semiconductor provided a higher I₀/I₁₀₀ value, larger response range, higher Stern-Volmer constant (K_SV) value, and faster response time compared to the undoped form, and also NiO and SnO₂ additive-doped forms of H₂TPP. The response and the recovery times of the porphyrin-based sensing slide along with Ni:SnO₂ additives have been measured as 12 and 50 s. These results make the H₂TPP along with the MOSs promising candidates as oxygen probes.

改进光学氧传感器的性能可以通过将金属氧化物半导体 (MOS) 添加剂添加到包含固定在聚合物薄膜中的氧传感剂的组合物中来实现。几十年来，MOS 因其对许多目标气体的高灵敏度而引起了人们对气体传感器的极大兴趣。_{在此，在 NiO、SnO 2}、Ni:SnO ₂的存在下，内消旋四苯基卟啉 (H ₂ TPP) 染料被固定到聚 (1-三甲基甲硅烷基-1-丙炔) (poly(TMSP)) 硅橡胶中金属氧化物颗粒作为添加剂，并制备了它们的薄膜以研究氧敏感光学化学传感器的性能。通过XPS、XRD、FT-IR、PL光谱和SEM方法对合成的金属氧化物粉末进行表征。_{研究了浓度范围为 0%–100% [O 2} ]的 H ₂ TPP 基薄膜的基于强度的光谱和衰减动力学。卟啉的氧敏感性（I ₀ /I ₁₀₀）计算为70%。_{而在 NiO、SnO 2}、Ni:SnO ₂添加剂的存在下，基于 H ₂ TPP 的传感器载玻片的相对信号强度值分别测量为 75%、80% 和 88% 。H₂ TPP 与 Ni:SnO ₂半导体相结合提供了更高的 I ₀ /I ₁₀₀值、更大的响应范围、更高的 Stern-Volmer 常数 (K _SV ) 值和更快的响应时间，与未掺杂的形式以及 NiO 和 SnO 相比₂种添加剂掺杂形式的H ₂ TPP。卟啉基传感载玻片与 Ni:SnO ₂添加剂的响应和恢复时间已测量为 12 和 50 秒。这些结果使 H ₂ TPP 与 MOS 一起有望成为氧探针的候选者。