F-doping-Enhanced Carrier Transport in the SnO2/Perovskite Interface for High-Performance Perovskite Solar Cells,ACS Applied Materials & Interfaces

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F-doping-Enhanced Carrier Transport in the SnO2/Perovskite Interface for High-Performance Perovskite Solar Cells
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2022-09-12 , DOI: 10.1021/acsami.2c11390
Tianyuan Luo _{1,

2} , Gang Ye ₁ , Xiayan Chen ₁ , Hao Wu ₁ , Wenfeng Zhang _{1,

2,

3} , Haixin Chang _{1,

2,

3}

Affiliation

SnO₂ is widely used as the electron transport layer (ETL) in n–i–p perovskite solar cells. However, the deep-level defects at the interface between SnO₂ and the perovskite film will lead to energy loss, reducing the open-circuit voltage. Therefore, the interface optimization is essential to raise the efficiency and enhance the stability of perovskite solar cells. In this work, we introduce NH₄F into the SnO₂ electron transport layers, and the optimized SnO₂ films reduce the interface defect density, improve the charge extraction, and reveal a better energy-level arrangement. Compared to the conventional SnO₂ perovskite solar cell, the average V_oc is improved by 70 mV with the champion efficiency up to 22.12%. Moreover, the unencapsulated F-doped SnO₂ perovskite solar cells show better thermal stability (maintained 86.2%) and humidity stability (maintained 80.8%) after 35 days.

中文翻译：

用于高性能钙钛矿太阳能电池的 SnO2/钙钛矿界面中的 F 掺杂增强载流子传输

SnO ₂广泛用作 n-i-p 钙钛矿太阳能电池中的电子传输层 (ETL)。_{然而，SnO 2}与钙钛矿薄膜界面处的深能级缺陷会导致能量损失，降低开路电压。因此，界面优化对于提高钙钛矿太阳能电池的效率和稳定性至关重要。在这项工作中，我们将NH ₄ F 引入到SnO ₂电子传输层中，优化后的SnO ₂薄膜降低了界面缺陷密度，提高了电荷提取，并揭示了更好的能级排列。与传统的 SnO ₂钙钛矿太阳能电池相比，平均V _oc提升了 70 mV，冠军效率高达 22.12%。此外，未封装的 F 掺杂 SnO ₂钙钛矿太阳能电池在 35 天后表现出更好的热稳定性（保持 86.2%）和湿度稳定性（保持 80.8%）。

更新日期：2022-09-12

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