Interlayer excitons (IXs) in MoSe₂–WSe₂ heterobilayers have generated interest as highly tunable light emitters in transition metal dichalcogenide (TMD) heterostructures. Previous reports of spectrally narrow (<1 meV) photoluminescence (PL) emission lines at low temperature have been attributed to IXs localized by the moiré potential between the TMD layers. We show that spectrally narrow IX PL lines are present even when the moiré potential is suppressed by inserting a bilayer hexagonal boron nitride (hBN) spacer between the TMD layers. We compare the doping, electric field, magnetic field, and temperature dependence of IXs in a directly contacted MoSe₂–WSe₂ region to those in a region separated by bilayer hBN. The doping, electric field, and temperature dependence of the narrow IX lines are similar for both regions, but their excitonic g-factors have opposite signs, indicating that the origin of narrow IX PL is not the moiré potential.

_{MoSe 2} -WSe ₂异质双层中的层间激子 (IX)作为过渡金属二硫属化物 (TMD) 异质结构中的高度可调发光体引起了人们的兴趣。先前关于低温下光谱窄 (<1 meV) 光致发光 (PL) 发射线的报道归因于由 TMD 层之间的莫尔电位定位的 IX。我们表明，即使通过在 TMD 层之间插入双层六方氮化硼 (hBN) 间隔物来抑制莫尔电位，也存在光谱窄的 IX PL 线。_{我们比较了 IX 在直接接触的 MoSe 2} –WSe ₂中的掺杂、电场、磁场和温度依赖性区域到由双层 hBN 分隔的区域中的区域。两个区域的窄 IX 线的掺杂、电场和温度依赖性相似，但它们的激子 g 因子具有相反的符号，表明窄 IX PL 的起源不是莫尔电位。