We report the investigation of local structure, electronic and optical properties of different polymorphs of (YO_1.5)_x(HfO₂)_1-x (x = 0, 0.05, 0.10, 0.15, and 0.20) epitaxial thin films on YSZ(100) substrate prepared by pulsed laser deposition technique. The X-ray diffraction results confirm that the deposited films are epitaxial and crystal structure changes from monoclinic to orthorhombic to cubic/tetragonal as Y concentration increases in HfO₂ thin films. Spectroscopic identification of phase transformation in these thin films was investigated using Fourier transform infrared and X-ray absorption spectroscopy (XAS). Effect of crystal structure on Hf-O & Hf-Hf bond distances and disorder were investigated by extended X-ray absorption fine structure. O K-edge XAS spectra show profound changes in e_g and t_2g peaks for different HfO₂ polymorphs. X-ray photoelectron spectroscopic studies confirm that different chemical environments are present in different polymorphs of HfO₂ thin film. The photoluminescence measurements validate the wide band spectral emission in wavelength region of 400–550 nm for all polymorphs and photoluminescence areal intensity shows strong dependence on phase and local structure disorder. This work will be helpful in understanding the basic material properties and spectroscopic identification of different HfO₂ phases of high application relevance in semiconductor industry.

_{我们报告了 YSZ(100) 上 (YO 1.5} ) _x (HfO ₂ ) _{1- x} ( x  = 0, 0.05, 0.10, 0.15, 和 0.20) 外延薄膜的不同多晶型的局部结构、电子和光学性质的研究采用脉冲激光沉积技术制备的基板。X 射线衍射结果证实，随着 HfO _{2中 Y 浓度的增加，沉积薄膜是外延的，晶体结构从单斜晶变为斜方晶，再到立方/四方晶。}薄膜。使用傅里叶变换红外和 X 射线吸收光谱 (XAS) 研究了这些薄膜中相变的光谱鉴定。通过扩展X射线吸收精细结构研究了晶体结构对Hf-O和Hf-Hf键距离和无序的影响。_{O K 边 XAS 光谱显示不同 HfO 2多晶型物的eg}和 t _2g峰发生了深刻变化。X 射线光电子能谱研究证实，不同的化学环境存在于不同的 HfO _{2多晶型物中}薄膜。光致发光测量验证了所有多晶型物在 400-550 nm 波长范围内的宽带光谱发射，并且光致发光面强度显示出对相位和局部结构无序的强烈依赖性。这项工作将有助于了解半导体行业中具有高度应用相关性的不同HfO _{2相的基本材料特性和光谱鉴定。}