The mortality of people worldwide caused by COVID-19 has enhanced the research interest to design and develop power-efficient, low-cost, and sensitive biosensors to detect a wide range of biomolecules or foreign particles that can cause severe negative impact on humans. A novel Bio-RFET biosensor with hetero-material (HM) for source/channel and drain regions and hetero-dielectric (HD) is proposed, which acts as an n-MOSFET or a p-MOSFET and n-TFET or p-TFET. This HM-HD-RFET biosensor senses the biomolecules by the label-free dielectric modulation (DM) technique. When the biomolecules are present in the nanocavity, the biosensor can detect the biomolecules without labeling costs. It also changes the dielectric polarization within the nanocavities, and causes a drain current variation in the presence of an electric field. In this research article, (SiO₂ + TiO₂) and an AlGaAs/Ge-based HD-HM-RFET have been analyzed for their use in biosensing. We found that the proposed device exhibits higher sensitivity as compared to a SiO₂ + HfO₂-HM-RFET and a Si-based SiO₂ + TiO₂-RFET for varying dielectric constants (K) from K = 20–80 and charge densities in the range − 5 × 10¹¹ to 1 × 10¹³ C/cm². Further, it can be noticed that n-SiO₂ + TiO₂-HM-TFET possesses the highest I_d-V_gs sensitivity of 5.09 × 10¹³, I_ON/I_OFF ratio of 1.23 × 10⁹, lowest SS of 20.3 mV/dec, and V_th of 1.48 V.

由 COVID-19 引起的全世界人民的死亡率增强了设计和开发节能、低成本和灵敏的生物传感器的研究兴趣，以检测可能对人类造成严重负面影响的各种生物分子或外来颗粒。提出了一种新型 Bio-RFET 生物传感器，其源极/沟道和漏极区域的异质材料 (HM) 和异质电介质 (HD) 可用作n -MOSFET 或p -MOSFET 和n -TFET 或p-TFET。这种 HM-HD-RFET 生物传感器通过无标记介电调制 (DM) 技术感应生物分子。当生物分子存在于纳米腔中时，生物传感器可以检测生物分子而无需标记成本。它还改变了纳米腔内的电介质极化，并在存在电场的情况下导致漏极电流变化。在这篇研究文章中，分析了 (SiO ₂  + TiO ₂ ) 和基于 AlGaAs/Ge 的 HD-HM-RFET 在生物传感中的用途。我们发现，与 SiO ₂  + HfO ₂ -HM-RFET 和 Si 基 SiO ₂  + TiO ₂ -RFET相比，对于不同介电常数 () 从K  = 20–80 和范围内的电荷密度 - 5 × 10 ¹¹到 1 × 10 ¹³  C/cm ²。此外，可以注意到，n -SiO ₂  + TiO ₂ -HM-TFET 具有最高的 I _d -V _gs灵敏度 5.09 × 10 ¹³，I _ON /I _OFF比为 1.23 × 10 ⁹，最低 SS 为 20.3 mV /dec，V _th为 1.48 V。