异丙醇在SiO2表面的吸附与表面反应,Journal of Vacuum Science & Technology A

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异丙醇在SiO2表面的吸附与表面反应
Journal of Vacuum Science & Technology A ( IF 2.4 ) Pub Date : 2022-07-11 , DOI: 10.1116/6.0002002
Takezo Mawaki ₁ , Akinobu Teramoto ₂ , Katsutoshi Ishii ₃ , Yoshinobu Shiba ₄ , Rihito Kuroda ₁ , Tomoyuki Suwa ₄ , Shuji Azumo ₃ , Akira Shimizu ₃ , Kota Umezawa ₃ , Yasuyuki Shirai ₄ , Shigetoshi Sugawa ₄

Affiliation

在这项研究中，我们研究了异丙醇 (IPA) 气体在二氧化硅 (SiO ₂ ) 表面上的吸附和表面反应。研究了 IPA 分解行为的温度依赖性以及对 SiO ₂表面的影响，例如IPA 处理过程中 SiO _{2的还原。}通过 X 射线光电子能谱 (XPS) 分析 IPA 处理前后SiO ₂表面的化学结构。使用配备 SiO ₂反应器和傅里叶变换红外光谱 (FT-IR) 的在线评估系统研究 IPA 的分解行为。在温度高于 150 °C 的 IPA 处理过程中，不同类型的有机物沉积在 SiO2 上_{2 个}表面，取决于温度。SiO ₂没有被还原，并且它的表面状态在低于350°C的温度下没有改变。此外，我们研究了经过和未经 IPA 处理的 SiO _{2表面吸附的三甲基铝 (TMAl) 的量。}结果，通过IPA处理，吸附在SiO ₂表面上的TMAl量减少了约25％。我们发现通过IPA处理获得的有机物部分抑制了TMAl气体在SiO ₂表面的吸附。这些发现将有助于在先进的半导体制造中使用 IPA，例如在区域选择工艺中。

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Adsorption and surface reaction of isopropyl alcohol on SiO2surfaces

In this study, we investigated the adsorption and surface reaction of isopropyl alcohol (IPA) gas on silicon dioxide (SiO₂) surfaces. The temperature dependence of the decomposition behavior of IPA and the effect on the SiO₂ surface, such as reduction of SiO₂ during IPA treatment, were studied. The chemical structures of the SiO₂ surfaces before and after IPA treatment were analyzed by x-ray photoelectron spectroscopy (XPS). The decomposition behavior of IPA was investigated using an in-line evaluation system equipped with a SiO₂ reactor and Fourier-transform infrared spectroscopy (FT-IR). During IPA treatment at temperatures above 150 °C, different types of organic matter were deposited on the SiO₂ surfaces depending on the temperature. SiO₂ was not reduced, and its surface states were not changed at temperatures below 350 °C. In addition, we investigated the amount of trimethylaluminium (TMAl) adsorbed on SiO₂ surface with and without IPA treatment. As a result, the amount of TMAl adsorbed on SiO₂ surface was reduced by about 25% by the IPA treatment. We found that the organic matter obtained by IPA treatment partially inhibited the adsorption of the TMAl gas on SiO₂ surfaces. These findings will be useful for the use of IPA in the advanced semiconductor manufacturing such as in area-selective processes.

更新日期：2022-07-11

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