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Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD
Nanoscale Advances ( IF 4.6 ) Pub Date : 2022-09-02 , DOI: 10.1039/d2na00409g
Michal Macha 1 , Hyun Goo Ji 2 , Mukesh Tripathi 2 , Yanfei Zhao 2 , Mukeshchand Thakur 1 , Jing Zhang 2 , Andras Kis 2 , Aleksandra Radenovic 1
Nanoscale Advances ( IF 4.6 ) Pub Date : 2022-09-02 , DOI: 10.1039/d2na00409g
Michal Macha 1 , Hyun Goo Ji 2 , Mukesh Tripathi 2 , Yanfei Zhao 2 , Mukeshchand Thakur 1 , Jing Zhang 2 , Andras Kis 2 , Aleksandra Radenovic 1
Affiliation
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Among numerous thin film synthesis methods, metalorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for broad use in scalable and commercially adaptable two-dimensional material synthesis processes. Adapting the most efficient monolayer growth methodologies from tube-furnace systems to vertical-showerhead geometries allows us to overcome the intrinsic process limitations and improve the overall monolayer yield quality. Here, we demonstrate large-area, monolayer molybdenum disulphide growth by combining gas-phase precursor supply with unique tube-furnace approaches of utilizing sodium molybdate pre-seeding solution spincoated on a substrate along with water vapor added during the growth step. The engineered process yields a high-quality, 4-inch scale monolayer film on sapphire wafers. The monolayer growth coverage, average crystal size and defect density were evaluated using Raman and photoluminescence spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and scanning transmission electron microscopy imaging. Our findings provide a direct step forward toward developing a reproducible and large-scale MoS2 synthesis with commercial showerhead reactors.
中文翻译:
带有水蒸气辅助喷头 MOCVD 的晶圆级 MoS2
在众多薄膜合成方法中,在喷头反应器中进行的金属有机化学气相沉积是最有希望在可扩展和商业适应性二维材料合成过程中广泛使用的方法。采用从管式炉系统到垂直喷头几何形状的最有效的单层生长方法,使我们能够克服内在的工艺限制并提高整体单层产量质量。在这里,我们展示了大面积、单层二硫化钼的生长,方法是将气相前体供应与独特的管炉方法相结合,该方法利用旋涂在基板上的钼酸钠预晶种溶液以及在生长步骤中添加的水蒸气。该工程工艺可在蓝宝石晶片上产生高质量的 4 英寸规模的单层薄膜。使用拉曼和光致发光光谱、X射线光电子能谱、扫描电子显微镜和扫描透射电子显微镜成像评估单层生长覆盖率、平均晶体尺寸和缺陷密度。我们的研究结果为开发可重复的大规模 MoS 迈出了直接的一步2用商用喷头反应器合成。
更新日期:2022-09-02
中文翻译:

带有水蒸气辅助喷头 MOCVD 的晶圆级 MoS2
在众多薄膜合成方法中,在喷头反应器中进行的金属有机化学气相沉积是最有希望在可扩展和商业适应性二维材料合成过程中广泛使用的方法。采用从管式炉系统到垂直喷头几何形状的最有效的单层生长方法,使我们能够克服内在的工艺限制并提高整体单层产量质量。在这里,我们展示了大面积、单层二硫化钼的生长,方法是将气相前体供应与独特的管炉方法相结合,该方法利用旋涂在基板上的钼酸钠预晶种溶液以及在生长步骤中添加的水蒸气。该工程工艺可在蓝宝石晶片上产生高质量的 4 英寸规模的单层薄膜。使用拉曼和光致发光光谱、X射线光电子能谱、扫描电子显微镜和扫描透射电子显微镜成像评估单层生长覆盖率、平均晶体尺寸和缺陷密度。我们的研究结果为开发可重复的大规模 MoS 迈出了直接的一步2用商用喷头反应器合成。