Giant g-factor in Self-Intercalated 2D TaS2,Small

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Giant g-factor in Self-Intercalated 2D TaS2
Small ( IF 13.0 ) Pub Date : 2022-08-21 , DOI: 10.1002/smll.202201975
Ziying Wang _{1,

2,

3} , Zishen Wang _{3,

4} , Xin Zhou ₂ , Wei Fu ₅ , Haohan Li ₂ , Chaofei Liu ₂ , Jingsi Qiao _{3,

4} , Su Ying Quek _{3,

4} , Chenliang Su ₁ , Yuanping Feng _{3,

4} , Kian Ping Loh _{1,

2,

3}

Affiliation

Central to the application of spintronic devices is the ability to manipulate spins by electric and magnetic fields, which relies on a large Landé g-factor. The self-intercalation of layered transitional metal dichalcogenides with native metal atoms can serve as a new strategy to enhance the g-factor by inducing ferromagnetic instability in the system via interlayer charge transfer. Here, scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) are performed to extract the g-factor and characterize the electronic structure of the self-intercalated phase of 2H-TaS₂. In Ta₇S₁₂, a sharp density of states (DOS) peak due to the Ta intercalant appears at the Fermi level, which satisfies the Stoner criteria for spontaneous ferromagnetism, leading to spin split states. The DOS peak shows sensitivity to magnetic field up to 1.85 mV T⁻¹, equivalent to an effective g-factor of ≈77. This work establishes self-intercalation as an approach for tuning the g-factor.

中文翻译：

自插层二维 TaS2 中的巨大 g 因子

自旋电子器件应用的核心是通过电场和磁场操纵自旋的能力，这依赖于大的 Landé g因子。层状过渡金属二硫化物与天然金属原子的自嵌入可以作为一种新策略，通过层间电荷转移诱导系统中的铁磁不稳定性来增强g因子。在这里，进行扫描隧道显微镜 (STM) 和扫描隧道光谱 (STS) 以提取g因子并表征 2H-TaS ₂的自插层相的电子结构。在 Ta ₇ S ₁₂，由于 Ta 插层剂导致的态密度 (DOS) 峰出现在费米能级，这满足自发铁磁性的斯通纳标准，导致自旋分裂态。^{DOS峰显示对高达1.85 mV T -1}的磁场的敏感性，相当于≈77的有效g-因子。这项工作建立了自嵌入作为调整g因子的方法。

更新日期：2022-08-21

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