24.11% High Performance Perovskite Solar Cells by Dual Interfacial Carrier Mobility Enhancement and Charge-Carrier Transport Balance,Advanced Energy Materials

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24.11% High Performance Perovskite Solar Cells by Dual Interfacial Carrier Mobility Enhancement and Charge-Carrier Transport Balance
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2022-08-16 , DOI: 10.1002/aenm.202201269
Yuhong Zhang ₁ , Lin Xu ₁ , Jiao Sun ₂ , Yanjie Wu ₁ , Zitong Kan ₁ , Huan Zhang ₁ , Long Yang ₁ , Bin Liu ₁ , Biao Dong ₁ , Xue Bai ₁ , Hongwei Song ₁

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The open-circuit voltage (V_OC) and fill factor (FF) of perovskite solar cells (PSCs) are detrimentally weakened by carrier loss at the perovskite/charge transport layers (CTLs) interfaces. Herein, a dual interfacial modification strategy via placing Nb₂CT_x nanosheets with tailored optoelectrical properties induced by manipulating surface terminal groups at both perovskite/CTLs interfaces is employed. Such tactics not only concurrently implement carrier mobility enhancement of CTLs and interface energy-levels offsets reduction. More importantly, electrical simulation indicates that the Nb₂CT_x with O terminal groups located at grain boundaries of the perovskite layer, can more efficiently conduct hole current to the hole transport layer, therefore achieving charge-carrier transport balance in device. As a result, the synergy effect effectively elevates both the V_OC and FF of the cells, reaching maximum values of 1.253 V and 81.07%, respectively, finally delivering progressively increased device power conversion efficiency (PCE) of 24.11% with negligible hysteresis. This PCE value ranks in the highest values to date for PSCs employing MXenes materials. Moreover, the optimized devices show better thermal and light stability than control devices. This work demonstrates a simple and effective dual interfacial modification method utilizing Nb₂CT_x for photovoltaic field, involving photodetectors, light-emitting diodes, sensors, etc.

中文翻译：

24.11% 高性能钙钛矿太阳能电池通过双界面载体迁移率增强和电荷载体传输平衡

钙钛矿太阳能电池 (PSC)的开路电压 ( V _OC ) 和填充因子 (FF) 会因钙钛矿/电荷传输层 (CTL) 界面处的载流子损失而受到不利影响。在此，采用双界面改性策略，通过在两个钙钛矿/CTLs界面上通过操纵表面末端基团来放置具有定制光电特性的Nb ₂ CT _{x纳米片。}这种策略不仅同时实现了 CTL 的载流子迁移率增强和界面能级偏移减少。更重要的是，电模拟表明 Nb ₂ CT _xO末端基团位于钙钛矿层的晶界，可以更有效地将空穴电流传导到空穴传输层，从而实现器件中的电荷载流子传输平衡。结果，协同效应有效地提高了电池的V _OC和 FF，分别达到 1.253 V 和 81.07% 的最大值，最终实现了 24.11% 的器件功率转换效率 (PCE) 逐渐提高，滞后可忽略不计。对于使用 MXenes 材料的 PSC，此 PCE 值在迄今为止的最高值中名列前茅。此外，优化后的器件显示出比控制器件更好的热稳定性和光稳定性。_{这项工作展示了一种利用 Nb 2} CT _x的简单有效的双界面改性方法用于光伏领域，涉及光电探测器、发光二极管、传感器等。

更新日期：2022-08-16

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