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Precision Synthesis of Boron-Doped Graphene Nanoribbons: Recent Progress and Perspectives
Macromolecular Chemistry and Physics ( IF 2.5 ) Pub Date : 2022-08-10 , DOI: 10.1002/macp.202200232
Jin‐Jiang Zhang 1 , Ji Ma 1 , Xinliang Feng 1, 2
Affiliation  

Structurally precision graphene nanoribbons (GNRs) have attracted great interest considering their prospective applications as organic carbon materials for nanoelectronics. The electronic properties of GNRs not only critically depend on the edge structure and width but also on the heteroatom type, doping position, and concentration. Motivated by the recent undisputable progress in the synthesis of stable boron-doped polycyclic aromatic hydrocarbons (B-PAHs), considerable efforts have been devoted to the precision synthesis of the corresponding boron-doped GNRs (B-GNRs) via bottom-up synthesis approach in recent years in view of the extraordinary ability of boron doping on modulating their physiochemical properties. In this review, an overview of the bottom-up organic synthesis of B-GNRs, including the precursor design and synthesis, structure characterization of the resulting B-GNRs, and investigation of their electronic properties is provided. Moreover, the future challenges and perspectives regarding the bottom-up synthesis of B-GNRs are also discussed. The authors hope that this review will further stimulate the synthesis and device integrations of B-GNRs with a combined effort from different disciplines.

中文翻译:

掺硼石墨烯纳米带的精密合成:最新进展与展望

考虑到其作为纳米电子学有机碳材料的潜在应用,结构精密的石墨烯纳米带 (GNR) 引起了极大的兴趣。GNR 的电子特性不仅主要取决于边缘结构和宽度,还取决于杂原子类型、掺杂位置和浓度。受最近在合成稳定的掺硼多环芳烃(B-PAHs)方面无可争议的进展的推动,人们通过自下而上的合成方法致力于相应的掺硼 GNRs(B-GNRs)的精确合成近年来,鉴于硼掺杂在调节其理化性质方面的非凡能力。在这篇综述中,概述了 B-GNR 自下而上的有机合成,包括前体设计和合成,提供了由此产生的 B-GNR 的结构表征,以及对其电子特性的研究。此外,还讨论了 B-GNR 自下而上合成的未来挑战和前景。作者希望这篇综述能够通过不同学科的共同努力,进一步促进 B-GNR 的合成和设备集成。
更新日期:2022-08-10
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