Selected-Area Fabrication of a Single-Walled Carbon Nanotube Schottky Junction with Tunable Gate Rectification,The Journal of Physical Chemistry Letters

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Selected-Area Fabrication of a Single-Walled Carbon Nanotube Schottky Junction with Tunable Gate Rectification
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2022-08-10 , DOI: 10.1021/acs.jpclett.2c02117
Ying Wang _{1,

2} , Taibin Wang ₁ , Hongjie Zhang ₁ , Dayan Liu ₁ , Jinjie Qian ₁ , Ran Du ₃ , Hua Xu ₄ , Shuchen Zhang ₅ , Zhi Yang ₁ , Qiuchen Zhao ₆ , Yue Hu ₁ , Shaoming Huang _{1,

7}

Affiliation

Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325000, P. R. China.
National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China.
School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, P. R. China.
Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xian 710119, P. R. China.
Beijing Science and Engineering Center for Nanocarbons, School of Materials Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China.
State Key Laboratory of Superhard Materials, Jilin University, Changchun, Jilin 132012, P. R. China.
School of Materials and Energy, Guangzhou Key Laboratory of Low-Dimensional Materials and Energy Storage Devices, Guangdong University of Technology, Guangzhou 510006, P. R. China.

Single-walled carbon nanotube (SWNT)-based devices are expected to play an important role in the next generation of electronic integrated circuits. As an important structural unit for SWNT-based electronics, the Schottky junction has a series of functions such as rectification, photoelectric detection, switching, etc. Here, we demonstrate a well-controlled localized radical reaction method to prepare an intramolecular SWNT Schottky junction with a closed edge. This junction exhibits strong gate-dependent rectifying behavior and a high rectification ratio of 962. Furthermore, the semiconducting part on the junction side could be effectively tuned from p-type doping to n-type doping, resulting in reversible rectifying behavior. Our work paves a new avenue for the design and synthesis of an SWNT Schottky junction, which is very important to future applications for carbon-based nanoelectronic devices.

中文翻译：

具有可调谐栅极整流的单壁碳纳米管肖特基结的选区制造

基于单壁碳纳米管（SWNT）的器件有望在下一代电子集成电路中发挥重要作用。作为基于 SWNT 的电子器件的重要结构单元，肖特基结具有整流、光电检测、开关等一系列功能。在这里，我们展示了一种可控的局部自由基反应方法来制备分子内 SWNT 肖特基结。一个封闭的边缘。该结表现出很强的栅极相关整流行为和962的高整流比。此外，结侧的半导体部分可以有效地从p型掺杂调整为n型掺杂，从而产生可逆的整流行为。我们的工作为 SWNT 肖特基结的设计和合成开辟了一条新途径，

更新日期：2022-08-10

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