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Improving the Performance of Red Organic Light-Emitting Transistors by Utilizing a High-k Organic/Inorganic Bilayer Dielectric
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2022-08-05 , DOI: 10.1021/acsami.2c07216
Changbin Zhao 1 , Hongming Chen 2 , Muhammad Umair Ali 3 , Chaoyi Yan 1 , Zhenguo Liu 4 , Yaowu He 1 , Hong Meng 1
Affiliation  

Integration of electrical switching and light emission in a single unit makes organic light-emitting transistors (OLETs) highly promising multifunctional devices for next-generation active-matrix flat-panel displays and related applications. Here, high-performance red OLETs are fabricated in a multilayer configuration that incorporates a zirconia (ZrOx)/cross-linked poly(vinyl alcohol) (C-PVA) bilayer as a dielectric. The developed organic/inorganic bilayer dielectric renders high dielectric constant as well as improved dielectric/semiconductor interface quality, contributing to enhanced carrier mobility and high current density. In addition, an efficient red phosphorescent organic emitter doped in a bihost system is employed as the emitting layer for an effective exciton formation and light generation. Consequently, our optimized red OLETs displayed a high brightness of 16 470 cd m–2 and a peak external quantum efficiency of 11.9% under a low gate and source–drain voltage of −24 V. To further boost the device performance, an electron-blocking layer is introduced for ameliorated charge-carrier balance and hence suppressed exciton-charge quenching, which resulted in an improved maximum brightness of 20 030 cd m–2. We anticipate that the new device optimization approaches proposed in this work would spur further development of efficient OLETs with high brightness and curtailed efficiency roll-off.

中文翻译:

利用高 k 有机/无机双层电介质提高红色有机发光晶体管的性能

在单个单元中集成电开关和发光使有机发光晶体管 (OLET) 成为下一代有源矩阵平板显示器和相关应用的极具前景的多功能器件。在这里,高性能红色 OLET 采用多层结构制造,其中包含氧化锆 (ZrO x)/交联聚乙烯醇 (C-PVA) 双层作为电介质。开发的有机/无机双层电介质具有高介电常数以及改善的电介质/半导体界面质量,有助于提高载流子迁移率和高电流密度。此外,在双主体系统中掺杂的高效红色磷光有机发光体被用作发光层,用于有效的激子形成和发光。因此,我们优化的红色 OLET 显示出 16 470 cd m –2的高亮度在 -24 V 的低栅极和源漏电压下,峰值外部量子效率为 11.9%。为了进一步提高器件性能,引入电子阻挡层以改善电荷载流子平衡,从而抑制激子电荷猝灭,导致最大亮度提高到 20 030 cd m –2。我们预计,这项工作中提出的新器件优化方法将促进具有高亮度和减少效率滚降的高效 OLET 的进一步发展。
更新日期:2022-08-05
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