In this work, type II heterojunctions were constructed by in suit loading of ZnIn₂S₄ (ZIS) nanosheets onto S-doped g-C₃N₄ (SCN) nanosheets by a simple hydrothermal synthesis method. The formation of heterojunction induced rapid electron-hole separation, while the introduction of SCN reduced the internal resistance of photogenerated carriers to transfer. When the mass fraction of SCN was 20 %, the best photocatalytic hydrogen production performance was 1.63 mmol g⁻¹ h⁻¹ under visible light irradiation (λ > 420 nm), which was 7.7 and 2.8 times higher than SCN (0.21 mmol g⁻¹ h⁻¹) and ZIS (0.57 mmol g⁻¹ h⁻¹), respectively. The enhanced photocatalytic activity was mainly due to greater light utilization achieved by band gap adjustment through constructing heterojunctions and improved electron-hole separation efficiency. This method can effectively improve the photocatalytic performance of ZIS-based photocatalysts in a simple way.

在这项工作中，通过简单的水热合成方法，将 ZnIn ₂ S ₄ (ZIS) 纳米片加载到 S 掺杂的 gC ₃ N _{4 (SCN) 纳米片上，构建了 II 型异质结。}异质结的形成导致电子-空穴快速分离，而SCN的引入降低了光生载流子传输的内阻。当SCN的质量分数为20 %时，在可见光照射（λ > 420 nm）下的最佳光催化制氢性能为1.63 mmol g ^-1 h ^{-1 ，分别是SCN（0.21 mmol g -}）的7.7和2.8倍。 ¹ h ^-1 ) 和 ZIS (0.57 mmol g ^-1 h^-1 )，分别。增强的光催化活性主要是由于通过构建异质结调节带隙和提高电子-空穴分离效率实现了更高的光利用率。该方法可以简单有效地提高ZIS基光催化剂的光催化性能。