The two operational amplifier architectures (Op-Amps) are proposed based on depletion-mode MOS transistors and n-channel junction FET (n-JFET) modes, implemented using the modular XB06 XFAB process technology. The computer simulation of Op-Amps in the CAD Cadence showed that the open-loop gain of Op-Amp exceeds 65 dB, and the offset voltage's systematic component is within 10 μV in the temperature range from −60 to + 120/140 °C. The Op-Amp circuits of the proposed subclass can have low static current consumption and can be performed not only on silicon MOS and JFETs, but also on the basis of wide-gap semiconductors (SiC CJFET, GaN CJFET or GaAs CJFET). The recommended area of application of the considered circuitry is analog interfaces of sensors of physical quantities for problems of high energy physics, space instrumentation and medicine.

两种运算放大器架构 (Op-Amps) 是基于耗尽型 MOS 晶体管和 n 沟道结型 FET (n-JFET) 模式提出的，使用模块化 XB06 XFAB 工艺技术实现。CAD Cadence中运算放大器的计算机仿真表明，运算放大器的开环增益超过65 dB，在−60至+ 120/140°C的温度范围内，失调电压的系统分量在10 μV以内. 所提出子类的运算放大器电路可以具有低静态电流消耗，并且不仅可以在硅 MOS 和 JFET 上执行，还可以在宽禁带半导体（SiC CJFET、GaN CJFET 或 GaAs CJFET）的基础上执行。所考虑电路的推荐应用领域是物理量传感器的模拟接口，用于解决高能物理、空间仪器和医学问题。