Crosslinkable hole transport materials (HTMs) with high triplet energies would have a balance of carrier injection into the emitting material layer, suppressing the triplet exciton quenching and resulting in high-performance solution-processed organic light-emitting diode (OLED) devices. Two novel crosslinkable HTMs with different central units, N², N⁸-di-p-tolyl-N²,N⁸-bis(4-vinylphenyl)dibenzo[b,d]thiophene-2,8-diamine (V-p-DBT) and N²,N⁸-di-p-tolyl-N²,N⁸-bis(4-vinylphenyl)dibenzo[b,d]furan-2,8-diamine (V-p-DBF), were designed and synthesized. The use of dibenzothiophene and dibenzofuran units increases the torsion angle compared with the commonly used N, N′-di-p-tolyl-N, N′-bis(4-vinylphenyl)-[1,1′-biphenyl]-4,4′-diamine (V-p-TPD), leading to high triplet energies of 2.57 and 2.64 eV, respectively. The triplet energies of V-p-DBT and V-p-DBF effectively suppress triplet exciton quenching. Furthermore, the crosslinked HTM layer showed excellent solvent-resistant abilities and high thermal stability. An outstanding maximum current efficiency (CE_max) of 79.94 cd A⁻¹ and maximum external quantum efficiency (EQE_max) of 24.35% were obtained by V-p-DBF-based green thermally activated delayed fluorescent (TADF) OLEDs. This work provides a new molecular design strategy for achieving efficient solution-processed TADF OLEDs.

具有高三线态能量的可交联空穴传输材料 (HTM) 可以平衡载流子注入发光材料层，抑制三线态激子猝灭，从而产生高性能的溶液处理有机发光二极管 (OLED) 器件。两种具有不同中心单元的新型可交联 HTM，N ² , N ⁸ -di- p -tolyl- N ² , N ⁸ -bis (4-vinylphenyl)dibenzo[b,d]thiophene-2,8-diamine (V- p -DBT) 和N ² , N ⁸ -di-对甲苯基- N ² , N ⁸-bis(4-vinylphenyl)dibenzo[b,d]furan-2,8-diamine (V- p -DBF), were designed and synthesed. 使用二苯并噻吩和二苯并呋喃单元，与常用的N,N'-二-对甲苯基-N,N'-双(4-乙烯基苯基)-[1,1'-联苯]-4相比，增加了扭转角， 4'-二胺 (V- p -TPD)，分别导致 2.57 和 2.64 eV 的高三线态能量。V- p -DBT和V- p -DBF的三重态能量有效地抑制了三重态激子猝灭。此外，交联的 HTM 层表现出优异的耐溶剂性和高热稳定性。出色的最大电流效率 (CE _max ) 为 79.94 cd A ⁻¹基于 V- p -DBF 的绿色热激活延迟荧光 (TADF) OLED获得了 24.35% 的最大外量子效率 (EQE _{max )。}这项工作为实现高效的溶液处理 TADF OLED 提供了一种新的分子设计策略。