Ferroelectric domain wall memories have been proposed as a promising candidate for nonvolatile memories, given their intriguing advantages including low energy consumption and high-density integration. Perovskite oxides possess superior ferroelectric prosperities but perovskite-based domain wall memory integrated on silicon has rarely been reported due to the technical challenges in the sample preparation. Here, we demonstrate a domain wall memory prototype utilizing freestanding BaTiO₃ membranes transferred onto silicon. While as-grown BaTiO₃ films on (001) SrTiO₃ substrate are purely c-axis polarized, we find they exhibit distinct in-plane multidomain structures after released from the substrate and integrated onto silicon due to the collective effects from depolarizing field and strain relaxation. Based on the strong in-plane ferroelectricity, conductive domain walls with reading currents up to nanoampere are observed and can be both created and erased artificially, highlighting the great potential of the integration of perovskite oxides with silicon for ferroelectric domain wall memories.

铁电畴壁存储器已被提议作为非易失性存储器的有希望的候选者，因为它们具有包括低能耗和高密度集成在内的有趣优势。钙钛矿氧化物具有优异的铁电性能，但由于样品制备中的技术挑战，集成在硅上的基于钙钛矿的畴壁存储器很少被报道。在这里，我们展示了利用转移到硅上的独立式 BaTiO ₃膜的畴壁存储器原型。而在 (001) SrTiO _{3衬底上生长的 BaTiO 3}薄膜是纯c轴极化，我们发现它们在从衬底释放并集成到硅上后表现出明显的平面内多畴结构，这是由于去极化场和应变松弛的集体效应。基于强大的面内铁电性，可以观察到读取电流高达纳安培的导电畴壁，并且可以人工创建和擦除，突出了钙钛矿氧化物与硅集成用于铁电畴壁存储器的巨大潜力。