氧化物半导体器件的进展、挑战和机遇：从显示背板到 3D 集成半导体芯片等应用的关键构建模块,Advanced Materials

当前位置： X-MOL 学术 › Adv. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

氧化物半导体器件的进展、挑战和机遇：从显示背板到 3D 集成半导体芯片等应用的关键构建模块
Advanced Materials ( IF 27.4 ) Pub Date : 2022-07-21 , DOI: 10.1002/adma.202204663
Taikyu Kim ₁ , Cheol Hee Choi ₁ , Jae Seok Hur ₁ , Daewon Ha ₂ , Bong Jin Kuh ₂ , Yongsung Kim ₃ , Min Hee Cho ₂ , Sangwook Kim ₃ , Jae Kyeong Jeong ₁

Affiliation

由于硅在进一步缩小尺寸方面面临着物理限制，二维过渡金属二硫属化物和氧化物半导体（OS）等新型半导体材料受到了极大的关注，以继续以摩尔定律为代表的不断要求的缩小尺寸。其中，OS被认为是最有前途的替代材料，因为它具有一些有趣的特性，例如适度的迁移率、极低的截止电流、良好的均匀性以及与传统互补金属氧化物半导体兼容方法的低温加工性。实际上，OS 已成功取代高端液晶显示设备中的氢化非晶硅，并且现已成为有机发光二极管显示器的标准背板电子器件，尽管距 2004 年发明时间还很短。新一代电子产品，例如单片 3D 集成中的后端晶体管应用，超出了显示应用的范围，但仍有很大的进一步研究空间，例如高迁移率、免疫短沟道效应、低电接触特性、本研究从材料科学和设备物理的角度回顾了操作系统的简史和设备应用的最新进展。同时，还讨论了下一代电子产品中使用的操作系统所面临的挑战和机遇。

"点击查看英文标题和摘要"

Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips

As Si has faced physical limits on further scaling down, novel semiconducting materials such as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained tremendous attention to continue the ever-demanding downscaling represented by Moore's law. Among them, OS is considered to be the most promising alternative material because it has intriguing features such as modest mobility, extremely low off-current, great uniformity, and low-temperature processibility with conventional complementary-metal–oxide–semiconductor-compatible methods. In practice, OS has successfully replaced hydrogenated amorphous Si in high-end liquid crystal display devices and has now become a standard backplane electronic for organic light-emitting diode displays despite the short time since their invention in 2004. For OS to be implemented in next-generation electronics such as back-end-of-line transistor applications in monolithic 3D integration beyond the display applications, however, there is still much room for further study, such as high mobility, immune short-channel effects, low electrical contact properties, etc. This study reviews the brief history of OS and recent progress in device applications from a material science and device physics point of view. Simultaneously, remaining challenges and opportunities in OS for use in next-generation electronics are discussed.

更新日期：2022-07-21

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南