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Spectral Regulation and Efficiency Optimization in Cr3+-Doped Gadolinium Aluminum Gallium Garnet Near-Infrared Ceramic Phosphors via Crystal-Field Engineering
Advanced Materials Technologies ( IF 6.4 ) Pub Date : 2022-07-21 , DOI: 10.1002/admt.202200519 Hangjie Jiang 1, 2 , Liyan Chen 2, 3 , Xianhui Wu 1, 2 , Zhaohua Luo 2 , Ruiyang Li 2 , Yongfu Liu 2 , Zehua Liu 2 , Peng Sun 2 , Weixiong You 1 , Jun Jiang 2
Advanced Materials Technologies ( IF 6.4 ) Pub Date : 2022-07-21 , DOI: 10.1002/admt.202200519 Hangjie Jiang 1, 2 , Liyan Chen 2, 3 , Xianhui Wu 1, 2 , Zhaohua Luo 2 , Ruiyang Li 2 , Yongfu Liu 2 , Zehua Liu 2 , Peng Sun 2 , Weixiong You 1 , Jun Jiang 2
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The near-infrared (NIR) phosphor-converted light-emitting diode (pc-LED) is a new NIR light source with both compact structure and high efficiency, and its performances is greatly depended on the NIR phosphors. Herein, this work presents a Cr3+-doped gadolinium aluminum gallium garnet (GAGG:Cr3+) NIR ceramic phosphor with a broadband emission in the range of 650–850 nm, and optical performances that can be regulated via crystal-field engineering. By optimizing the Al/Ga ratio, an external quantum efficiency as high as 65% is observed. The thermal stability is enhanced with the increase of Al content, which is attributed to the broadening of bandgap and the weakening of electron–phonon coupling effect. The NIR light output powers of the fabricated device based on the GAGG:Cr3+ ceramic are up to 88.9 mW @ 10 mA and 1247.7 mW @ 200 mA, while the electro-optical conversion efficiencies were 28.5% @ 10 mA and 17.7% @ 200 mA, respectively. In addition, the NIR pc-LED exhibited a strong penetrability such that the veins in a palm could be clearly identified, allowing for its potential use in biosecurity applications.
中文翻译：
通过晶体场工程对 Cr3+ 掺杂钆铝镓石榴石近红外陶瓷荧光粉进行光谱调节和效率优化
近红外（NIR）荧光粉转换发光二极管（pc-LED）是一种结构紧凑、效率高的新型近红外光源，其性能在很大程度上取决于近红外荧光粉。在此，这项工作提出了一种 Cr 3+掺杂的钆铝镓石榴石 (GAGG:Cr 3+ ) NIR 陶瓷荧光粉，其宽带发射范围为 650–850 nm，其光学性能可通过晶体场工程进行调节. 通过优化 Al/Ga 比率，观察到高达 65% 的外部量子效率。热稳定性随着Al含量的增加而增强，这归因于带隙的加宽和电子 - 声子耦合效应的减弱。基于 GAGG:Cr 的制造器件的 NIR 光输出功率3+陶瓷高达 88.9 mW @ 10 mA 和 1247.7 mW @ 200 mA，而电光转换效率分别为 28.5% @ 10 mA 和 17.7% @ 200 mA。此外，NIR pc-LED 表现出很强的穿透性，可以清楚地识别手掌中的静脉，使其在生物安全应用中具有潜在用途。
更新日期：2022-07-21
中文翻译：
通过晶体场工程对 Cr3+ 掺杂钆铝镓石榴石近红外陶瓷荧光粉进行光谱调节和效率优化
近红外（NIR）荧光粉转换发光二极管（pc-LED）是一种结构紧凑、效率高的新型近红外光源，其性能在很大程度上取决于近红外荧光粉。在此，这项工作提出了一种 Cr 3+掺杂的钆铝镓石榴石 (GAGG:Cr 3+ ) NIR 陶瓷荧光粉，其宽带发射范围为 650–850 nm，其光学性能可通过晶体场工程进行调节. 通过优化 Al/Ga 比率，观察到高达 65% 的外部量子效率。热稳定性随着Al含量的增加而增强，这归因于带隙的加宽和电子 - 声子耦合效应的减弱。基于 GAGG:Cr 的制造器件的 NIR 光输出功率3+陶瓷高达 88.9 mW @ 10 mA 和 1247.7 mW @ 200 mA，而电光转换效率分别为 28.5% @ 10 mA 和 17.7% @ 200 mA。此外，NIR pc-LED 表现出很强的穿透性，可以清楚地识别手掌中的静脉，使其在生物安全应用中具有潜在用途。
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