二维 In2Se3：用于铁电数据存储的新兴先进材料,InfoMat

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二维 In2Se3：用于铁电数据存储的新兴先进材料
InfoMat ( IF 22.7 ) Pub Date : 2022-07-12 , DOI: 10.1002/inf2.12341
Yu‐Ting Huang ₁ , Nian‐Ke Chen ₁ , Zhen‐Ze Li ₁ , Xue‐Peng Wang ₁ , Hong‐Bo Sun _{1,

2} , Shengbai Zhang ₃ , Xian‐Bin Li ₁

Affiliation

铁电存储器凭借其低功耗、高速、高耐用性等优异性能成为下一代非易失性存储器的有希望的候选者。然而，当尺寸下降到纳米尺度时，常规铁电材料的铁电性将被去极化场消除。结果，铁电器件的小型化受到阻碍，使得铁电存储器无法跟上集成电路(IC)小型化的发展。最近，据报道二维（2D）In ₂ Se ₃在超薄尺度上保持稳定的铁电性，有望突破小型化的瓶颈。很快，基于 2D In ₂ Se _3的设备，包括铁电场效应晶体管、铁电沟道晶体管、突触铁电半导体结和铁电忆阻器。然而，仍然缺乏对二维 In ₂ Se ₃的结构和铁电转换机制的全面了解。在这里，不同相的原子结构、铁电转换的动力学机制以及 2D In ₂ Se _{3最新器件的性能/功能}被审查。此外，分析了结构、性能和器件性能之间的相关性。最后，提出了几个关键问题或挑战以及可能的研究方向。我们希望这篇综述论文能够为研究界开发用于实际工业应用的二维 In ₂ Se ₃基铁电存储器和计算技术提供及时的知识和帮助。

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Two-dimensional In2Se3: A rising advanced material for ferroelectric data storage

Ferroelectric memory is a promising candidate for next-generation nonvolatile memory owing to its outstanding performance such as low power consumption, fast speed, and high endurance. However, the ferroelectricity of conventional ferroelectric materials will be eliminated by the depolarization field when the size drops to the nanometer scale. As a result, the miniaturization of ferroelectric devices was hindered, which makes ferroelectric memory unable to keep up with the development of integrated-circuit (IC) miniaturization. Recently, a two-dimensional (2D) In₂Se₃ was reported to maintain stable ferroelectricity at the ultrathin scale, which is expected to break through the bottleneck of miniaturization. Soon, devices based on 2D In₂Se₃, including the ferroelectric field-effect transistor, ferroelectric channel transistor, synaptic ferroelectric semiconductor junction, and ferroelectric memristor were demonstrated. However, a comprehensive understanding of the structures and the ferroelectric-switching mechanism of 2D In₂Se₃ is still lacking. Here, the atomic structures of different phases, the dynamic mechanism of ferroelectric switching, and the performance/functions of the latest devices of 2D In₂Se₃ are reviewed. Furthermore, the correlations among the structures, the properties, and the device performance are analyzed. Finally, several crucial problems or challenges and possible research directions are put forward. We hope that this review paper can provide timely knowledge and help for the research community to develop 2D In₂Se₃ based ferroelectric memory and computing technology for practical industrial applications.

更新日期：2022-07-12

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