二维 MoO2/MoS2 垂直异质结构的空间受限一步生长，用于碱性电解质中的卓越析氢,Small

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二维 MoO2/MoS2 垂直异质结构的空间受限一步生长，用于碱性电解质中的卓越析氢
Small ( IF 13.0 ) Pub Date : 2022-07-16 , DOI: 10.1002/smll.202201051
Qinke Wu ₁ , Yuting Luo ₁ , Ruikuan Xie ₂ , Huiyu Nong ₁ , Zhengyang Cai ₁ , Lei Tang ₁ , Junyang Tan ₁ , Simin Feng ₁ , Shilong Zhao ₁ , Qiangmin Yu ₁ , Junhao Lin ₃ , Guoliang Chai ₂ , Bilu Liu ₁

Affiliation

基于 2D 材料的异质结构是通过堆叠或拼接单个 2D 层以在它们之间创建具有奇异特性的界面来构建的。在这里，开发了一种在厘米级衬底上原位生长大量二维异质结构的新策略。在该方法中，通过简单地调整金属前驱体和生长衬底之间的间隙距离，从而改变金属前驱体的浓度，在同一设置中可控地生长大量二维 MoS ₂、MoO ₂或其异质结构的 MoO ₂ /MoS ₂ 。喂养。首先使用横向力显微镜来识别异质结构中每种材料的位置，其中 MoO ₂在 MoS _2的顶部. _{值得注意的是，与纯 MoO 2}和 MoS _{2相比，在原子薄 MoO}₂（金属）和 MoS ₂（半导体）之间创建干净的界面会导致不同的电子结构。理论计算表明，这种界面处的电荷再分布导致MoO ₂ /MoS _{2异质结构上的HER性能得到改善，在10 mA cm}^-2下显示出60 mV的过电位和47 mV dec ^-1的Tafel斜率。这项工作报告了一种在大规模基板上原位生长异质结构的新策略，并提供了开发其应用的平台。

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Space-Confined One-Step Growth of 2D MoO2/MoS2 Vertical Heterostructures for Superior Hydrogen Evolution in Alkaline Electrolytes

2D material-based heterostructures are constructed by stacking or spicing individual 2D layers to create an interface between them, which have exotic properties. Here, a new strategy for the in situ growth of large numbers of 2D heterostructures on the centimeter-scale substrate is developed. In the method, large numbers of 2D MoS₂, MoO₂, or their heterostructures of MoO₂/MoS₂ are controllably grown in the same setup by simply tuning the gap distance between metal precursor and growth substrate, which changes the concentration of metal precursors feed. A lateral force microscope is used first to identify the locations of each material in the heterostructures, which have MoO₂ on the top of MoS₂. Noteworthy, the creation of a clean interface between atomic thin MoO₂ (metallic) and MoS₂ (semiconducting) results in a different electronic structure compared with pure MoO₂ and MoS₂. Theoretical calculations show that the charge redistribution at such an interface results in an improved HER performance on the MoO₂/MoS₂ heterostructures, showing an overpotential of 60 mV at 10 mA cm⁻² and a Tafel slope of 47 mV dec⁻¹. This work reports a new strategy for the in situ growth of heterostructures on large-scale substrates and provides platforms to exploit their applications.

更新日期：2022-07-16

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