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High-Performance Inverted Tandem OLEDs with the Charge Generation Layer based on MoOx and Ag Doped Planar Heterojunction
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2022-07-08 , DOI: 10.1002/adom.202200984
Yachen Xu 1 , Yixiao Niu 2 , Chunliu Gong 2 , Wei Shi 1 , Xuyong Yang 1 , Bin Wei 2 , Wai‐Yeung Wong 3
Affiliation  

The morphological and electrical characteristics of a planar-heterojunction structured charge generation layer (CGL) consisting of MoO3 doped N,N′-bis-(1-naphthalenyl)-N, N′-bis-phenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) as the p-type material and Ag-doped 4,7-diphenyl-1,10-phenanthroline (Bphen) as the n-type counterpart (NPB:MoO3/Bphen:Ag). A significant charge generation effect of CGL is observed and its mechanism is analyzed. The introduction of CGL can enhance the concentration of the charge carrier and balance the injection of carriers. Inverted tandem organic light-emitting diodes (OLEDs) with the CGL are fabricated. The inverted tandem OLEDs exhibit excellent optoelectronic performance due to the charge generation effect and the suppression of the high concentration quenching. The maximum current efficiency and external quantum efficiency of the inverted tandem OLED reached 27.91 cd A−1 and 11.18%, respectively, which are 110.95% and 95.79% higher than that of the inverted OLED.

中文翻译:

具有基于 MoOx 和 Ag 掺杂平面异质结的电荷产生层的高性能倒置串联 OLED

由 MoO 3掺杂的NN'-双-(1-萘基) -NN'-双-苯基-(1,1'- )组成的平面异质结结构电荷产生层 (CGL) 的形态和电学特性biphenyl)-4,4'-diamine (NPB) 作为p型材料,Ag 掺杂的 4,7-diphenyl-1,10-phenanthroline (Bphen) 作为n型对应物 (NPB:MoO 3/Bphen:Ag)。观察到CGL具有显着的电荷产生效应并分析其机理。CGL的引入可以提高电荷载流子的浓度,平衡载流子的注入。制造了具有 CGL 的倒置串联有机发光二极管 (OLED)。由于电荷产生效应和高浓度猝灭的抑制,倒置串联OLED表现出优异的光电性能。倒置串联OLED的最大电流效率和外量子效率分别达到27.91 cd A -1和11.18%,比倒置OLED高110.95%和95.79%。
更新日期:2022-07-08
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